Rubrene single-crystal organic field effect transistor with laser ablated BaTiO3 epitaxial growth thin-film as high-k insulator

Nobuya Hiroshiba; Ryotaro Kumashiro; Taishi Takenobu; Naoya Komatsu; Yusuke Suto; Yoshihiro Iwasa; Kenta Kotani; Iwao Kawayama; Masayoshi Tonouchi; Katsumi Tanigaki

Rubrene single-crystal organic field effect transistor with laser ablated BaTiO₃ epitaxial growth thin-film as high-k insulator

Nobuya Hiroshiba^*, Ryotaro Kumashiro, Taishi Takenobu, Naoya Komatsu, Yusuke Suto, Yoshihiro Iwasa, Kenta Kotani, Iwao Kawayama, Masayoshi Tonouchi, Katsumi Tanigaki

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High quality BaTiO₃ thin film epitaxially grown on a Nb-doped SrTiO₃ (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO₃ thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO₂ gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO₂/doped-Si.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Pages	270-275
Number of pages	6
Volume	965
Publication status	Published - 2006
Externally published	Yes
Event	2006 MRS Fall Meeting - Boston, MA Duration: 2006 Nov 27 → 2006 Dec 1

Other

Other	2006 MRS Fall Meeting
City	Boston, MA
Period	06/11/27 → 06/12/1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Hiroshiba, N, Kumashiro, R, Takenobu, T, Komatsu, N, Suto, Y, Iwasa, Y, Kotani, K, Kawayama, I, Tonouchi, M & Tanigaki, K 2006, Rubrene single-crystal organic field effect transistor with laser ablated BaTiO₃ epitaxial growth thin-film as high-k insulator. in Materials Research Society Symposium Proceedings. vol. 965, pp. 270-275, 2006 MRS Fall Meeting, Boston, MA, 06/11/27.

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title = "Rubrene single-crystal organic field effect transistor with laser ablated BaTiO3 epitaxial growth thin-film as high-k insulator",

abstract = "High quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.",

author = "Nobuya Hiroshiba and Ryotaro Kumashiro and Taishi Takenobu and Naoya Komatsu and Yusuke Suto and Yoshihiro Iwasa and Kenta Kotani and Iwao Kawayama and Masayoshi Tonouchi and Katsumi Tanigaki",

year = "2006",

language = "English",

isbn = "9781604234176",

volume = "965",

pages = "270--275",

booktitle = "Materials Research Society Symposium Proceedings",

note = "2006 MRS Fall Meeting ; Conference date: 27-11-2006 Through 01-12-2006",

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TY - GEN

T1 - Rubrene single-crystal organic field effect transistor with laser ablated BaTiO3 epitaxial growth thin-film as high-k insulator

AU - Hiroshiba, Nobuya

AU - Kumashiro, Ryotaro

AU - Takenobu, Taishi

AU - Komatsu, Naoya

AU - Suto, Yusuke

AU - Iwasa, Yoshihiro

AU - Kotani, Kenta

AU - Kawayama, Iwao

AU - Tonouchi, Masayoshi

AU - Tanigaki, Katsumi

PY - 2006

Y1 - 2006

N2 - High quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.

AB - High quality BaTiO3 thin film epitaxially grown on a Nb-doped SrTiO3 (BTO/Nb-STO) substrate by a laser ablation technique is employed as a high-k gate insulator for a field-effect transistor of a rubrene single crystal in order to search for the possibility of high carrier accumulation. The high dielectric constant of 280 esu for the prepared BaTiO3 thin film accumulates 0.1 holes/rubrene-molecule, which is 2.5 times as high as the maximum carrier number of 0.04 holes/rubrene-molecule attained in the case of SiO2 gate insulator. Important parameters of rubrene single crystal FETs on BTO/Nb- STO are also described in comparison with those on SiO2/doped-Si.

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M3 - Conference contribution

AN - SCOPUS:40949113191

SN - 9781604234176

VL - 965

SP - 270

EP - 275

BT - Materials Research Society Symposium Proceedings

T2 - 2006 MRS Fall Meeting

Y2 - 27 November 2006 through 1 December 2006

ER -

Rubrene single-crystal organic field effect transistor with laser ablated BaTiO₃ epitaxial growth thin-film as high-k insulator

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