ScAlN polarization inverted resonators and enhancement of kt2 in new YbAlN materials for BAW devices

Takahiko Yanagitani; Junjun Jia

doi:10.1109/ULTSYM.2019.8925786

ScAlN polarization inverted resonators and enhancement of k_t² in new YbAlN materials for BAW devices

Takahiko Yanagitani, Junjun Jia

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Citations (Scopus)

Abstract

AlN thin piezoelectric films are attractive for RF filter applications because of their low mechanical loss 1/Q_m. We here introduce new AlN based materials: polarization inverted ScAlN multilayer and YbAlN films. Enhancement of electromechanical coupling coefficient in YbAlN were theoretically and experimentally demonstrated. These materials are promising for application in BAW and SAW devices.

Original language	English
Title of host publication	2019 IEEE International Ultrasonics Symposium, IUS 2019
Publisher	IEEE Computer Society
Pages	894-899
Number of pages	6
ISBN (Electronic)	9781728145969
DOIs	https://doi.org/10.1109/ULTSYM.2019.8925786
Publication status	Published - 2019 Oct
Event	2019 IEEE International Ultrasonics Symposium, IUS 2019 - Glasgow, United Kingdom Duration: 2019 Oct 6 → 2019 Oct 9

Publication series

Name	IEEE International Ultrasonics Symposium, IUS
Volume	2019-October
ISSN (Print)	1948-5719
ISSN (Electronic)	1948-5727

Conference

Conference	2019 IEEE International Ultrasonics Symposium, IUS 2019
Country/Territory	United Kingdom
City	Glasgow
Period	19/10/6 → 19/10/9

Keywords

AlN
BAW resonators
Polarization inverted layer
ScAlN
YbAlN

ASJC Scopus subject areas

Acoustics and Ultrasonics

Access to Document

10.1109/ULTSYM.2019.8925786

Cite this

ScAlN polarization inverted resonators and enhancement of k_t² in new YbAlN materials for BAW devices. / Yanagitani, Takahiko ; Jia, Junjun.
2019 IEEE International Ultrasonics Symposium, IUS 2019. IEEE Computer Society, 2019. p. 894-899 8925786 (IEEE International Ultrasonics Symposium, IUS; Vol. 2019-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yanagitani, T & Jia, J 2019, ScAlN polarization inverted resonators and enhancement of k_t² in new YbAlN materials for BAW devices. in 2019 IEEE International Ultrasonics Symposium, IUS 2019., 8925786, IEEE International Ultrasonics Symposium, IUS, vol. 2019-October, IEEE Computer Society, pp. 894-899, 2019 IEEE International Ultrasonics Symposium, IUS 2019, Glasgow, United Kingdom, 19/10/6. https://doi.org/10.1109/ULTSYM.2019.8925786

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abstract = "AlN thin piezoelectric films are attractive for RF filter applications because of their low mechanical loss 1/Qm. We here introduce new AlN based materials: polarization inverted ScAlN multilayer and YbAlN films. Enhancement of electromechanical coupling coefficient in YbAlN were theoretically and experimentally demonstrated. These materials are promising for application in BAW and SAW devices.",

keywords = "AlN, BAW resonators, Polarization inverted layer, ScAlN, YbAlN",

author = "Takahiko Yanagitani and Junjun Jia",

note = "Funding Information: ACKNOWLEDGEMENT This work was supported by the JST PRESTO (No. JPMJPR16R8) and KAKENHI (Grant-in-Aid for Scientific Research No.16H04356, No.19H02202, and No.18K19037). Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Ultrasonics Symposium, IUS 2019 ; Conference date: 06-10-2019 Through 09-10-2019",

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