Scanning tunneling microscopy and spectroscopy studies of superconducting boron-doped diamond films

Terukazu Nishizaki*, Yoshihiko Takano, Masanori Nagao, Tomohiro Takenouchi, Hiroshi Kawarada, Norio Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


We report on scanning tunneling microscopy/spectroscopy (STM/STS) experiments on (1 1 1)-oriented epitaxial films of heavily boron-doped diamond grown by using the microwave plasma-assisted chemical vapor deposition method. STM/STS measurements were performed by 3He-refrigerator based STM under ultra-high vacuum. The STM topography on the film surface shows a corrugation (with a typical size of ∼1 μm) and grain-like microstructures (∼5-20 nm). The tunneling conductance spectra do not show large spatial dependence and superconductivity is observed independent of the surface structures. The tunneling spectra are analyzed by the Dynes function and the superconducting energy gap is estimated to be Δ = 0.87 meV at T=0.47 K, corresponding to 2 Δ / kB Tc = 3.7. The relatively large value of the broadening parameter Γ = 0.38 meV is discussed in terms of the inelastic electron scattering processes.

Original languageEnglish
Pages (from-to)22-26
Number of pages5
JournalScience and Technology of Advanced Materials
Issue numberSUPPL. 1
Publication statusPublished - 2006


  • Boron-doped diamond films
  • Energy gap
  • Scanning tunneling microscopy/spectroscopy
  • Superconductivity

ASJC Scopus subject areas

  • General Materials Science


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