Second-order Raman spectra and lattice dynamics in AlAs

T. Azuhata*, T. Sota, K. Suzuki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


We have re-examined the second-order Raman spectra in a thick AlAs layer grown on a GaAs substrate by polarized Raman spectroscopy. So as to reproduce the spectra, the force constants have been refined and then the phonon dispersion has been calculated within a modified version of the adiabatic bond-charge model. We present phonon frequencies at critical points, e.g. Gamma , X, L and W, and the force constants for AlAs. The phonon dispersion is compared with a previous ab initio result and it is shown that the procedure presented herein is useful. A brief discussion is also given of the analysis of the second-order Raman spectra of AlSb.

Original languageEnglish
Article number018
Pages (from-to)1949-1957
Number of pages9
JournalJournal of Physics: Condensed Matter
Issue number9
Publication statusPublished - 1995 Dec 1

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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