Secondary defect distribution in high energy ion implanted 4H-SiC

T. Ohno; Naoto Kobayashi

Secondary defect distribution in high energy ion implanted 4H-SiC

T. Ohno^*, Naoto Kobayashi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Chapter

1 Citation (Scopus)

Abstract

The distribution of secondary defects in B ⁺ or Al ⁺ implanted 4H-SiC is examined using TEM and SIMS. They distribute from the projected range for low dosage case and from near surface for high dosage case, and they distribute to the depth at the concentration of about 10% of the maximum dopant concentration. These secondary defects are extrinsic dislocation loops and the distribution of them is closely related to that of excess Si and C interstitials formed by implantation.

Original language	English
Title of host publication	Materials Science Forum
Publisher	Trans Tech Publ Ltd
Volume	338
Publication status	Published - 2000
Externally published	Yes
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 1999 Oct 10 → 1999 Oct 15

Other

Other	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials
City	Research Triangle Park, NC, USA
Period	99/10/10 → 99/10/15

ASJC Scopus subject areas

Materials Science(all)

Cite this

@inbook{3c9f26994cca4b44bc4331537e87e453,

title = "Secondary defect distribution in high energy ion implanted 4H-SiC",

abstract = "The distribution of secondary defects in B + or Al + implanted 4H-SiC is examined using TEM and SIMS. They distribute from the projected range for low dosage case and from near surface for high dosage case, and they distribute to the depth at the concentration of about 10% of the maximum dopant concentration. These secondary defects are extrinsic dislocation loops and the distribution of them is closely related to that of excess Si and C interstitials formed by implantation. ",

author = "T. Ohno and Naoto Kobayashi",

year = "2000",

language = "English",

volume = "338",

booktitle = "Materials Science Forum",

publisher = "Trans Tech Publ Ltd",

note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

}

TY - CHAP

T1 - Secondary defect distribution in high energy ion implanted 4H-SiC

AU - Ohno, T.

AU - Kobayashi, Naoto

PY - 2000

Y1 - 2000

N2 - The distribution of secondary defects in B + or Al + implanted 4H-SiC is examined using TEM and SIMS. They distribute from the projected range for low dosage case and from near surface for high dosage case, and they distribute to the depth at the concentration of about 10% of the maximum dopant concentration. These secondary defects are extrinsic dislocation loops and the distribution of them is closely related to that of excess Si and C interstitials formed by implantation.

AB - The distribution of secondary defects in B + or Al + implanted 4H-SiC is examined using TEM and SIMS. They distribute from the projected range for low dosage case and from near surface for high dosage case, and they distribute to the depth at the concentration of about 10% of the maximum dopant concentration. These secondary defects are extrinsic dislocation loops and the distribution of them is closely related to that of excess Si and C interstitials formed by implantation.

UR - http://www.scopus.com/inward/record.url?scp=0033703524&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033703524&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0033703524

VL - 338

BT - Materials Science Forum

PB - Trans Tech Publ Ltd

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Secondary defect distribution in high energy ion implanted 4H-SiC

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this