Selective growth of ZnTe on sapphire substrates using a SiO2 mask

Taizo Nakasu; Shota Hattori; Wei Che Sun; Masakazu Kobayashi

doi:10.1002/pssb.201600317

Selective growth of ZnTe on sapphire substrates using a SiO₂ mask

Taizo Nakasu^*, Shota Hattori, Wei Che Sun, Masakazu Kobayashi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO₂-masked sapphire substrates by molecular beam epitaxy (MBE). When ZnTe was grown at a high temperature (=350 °C), low growth rate (≦ 0.3 μm h⁻¹), and low J_Te/J_Zn flux ratio (≦ 0.83) compared with the conventional film growth conditions, the formation of ZnTe nuclei on the SiO₂ mask was avoided. The Te flux intensity significantly affected the selectivity of ZnTe growth. The selective growth of ZnTe on sapphire was revealed to be limited by the desorption of Te adatoms from the SiO₂.

Original language	English
Pages (from-to)	2265-2269
Number of pages	5
Journal	Physica Status Solidi (B) Basic Research
Volume	253
Issue number	11
DOIs	https://doi.org/10.1002/pssb.201600317
Publication status	Published - 2016 Nov 1

Keywords

ZnTe
heteroepitaxy
molecular beam epitaxy
sapphire
selective growth

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/pssb.201600317

Cite this

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title = "Selective growth of ZnTe on sapphire substrates using a SiO2 mask",

abstract = "ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO2-masked sapphire substrates by molecular beam epitaxy (MBE). When ZnTe was grown at a high temperature (=350 °C), low growth rate (≦ 0.3 μm h−1), and low JTe/JZn flux ratio (≦ 0.83) compared with the conventional film growth conditions, the formation of ZnTe nuclei on the SiO2 mask was avoided. The Te flux intensity significantly affected the selectivity of ZnTe growth. The selective growth of ZnTe on sapphire was revealed to be limited by the desorption of Te adatoms from the SiO2.",

keywords = "ZnTe, heteroepitaxy, molecular beam epitaxy, sapphire, selective growth",

author = "Taizo Nakasu and Shota Hattori and Sun, {Wei Che} and Masakazu Kobayashi",

note = "Funding Information: This work was supported in part by the Waseda University Research Initiatives, by the Waseda University Grant for Special Research Projects, by a research grant from a collaboration between the Mitsubishi Materials Corporation and the Faculty of Science and Engineering at Waseda University, by a Research Fellowship for Young Scientists from the Japan Society for the Promotion of Science, and by the Foundation of Ando Laboratory. The authors acknowledge T. Asahi of JX Nippon Mining and Metals Corporation for the support. The authors acknowledge Y. Takei and K. Utaka for their contributions. Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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AU - Kobayashi, Masakazu

N1 - Funding Information: This work was supported in part by the Waseda University Research Initiatives, by the Waseda University Grant for Special Research Projects, by a research grant from a collaboration between the Mitsubishi Materials Corporation and the Faculty of Science and Engineering at Waseda University, by a Research Fellowship for Young Scientists from the Japan Society for the Promotion of Science, and by the Foundation of Ando Laboratory. The authors acknowledge T. Asahi of JX Nippon Mining and Metals Corporation for the support. The authors acknowledge Y. Takei and K. Utaka for their contributions. Publisher Copyright: © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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N2 - ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO2-masked sapphire substrates by molecular beam epitaxy (MBE). When ZnTe was grown at a high temperature (=350 °C), low growth rate (≦ 0.3 μm h−1), and low JTe/JZn flux ratio (≦ 0.83) compared with the conventional film growth conditions, the formation of ZnTe nuclei on the SiO2 mask was avoided. The Te flux intensity significantly affected the selectivity of ZnTe growth. The selective growth of ZnTe on sapphire was revealed to be limited by the desorption of Te adatoms from the SiO2.

AB - ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO2-masked sapphire substrates by molecular beam epitaxy (MBE). When ZnTe was grown at a high temperature (=350 °C), low growth rate (≦ 0.3 μm h−1), and low JTe/JZn flux ratio (≦ 0.83) compared with the conventional film growth conditions, the formation of ZnTe nuclei on the SiO2 mask was avoided. The Te flux intensity significantly affected the selectivity of ZnTe growth. The selective growth of ZnTe on sapphire was revealed to be limited by the desorption of Te adatoms from the SiO2.

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