Selective growth of ZnTe on sapphire substrates using a SiO2 mask

Taizo Nakasu*, Shota Hattori, Wei Che Sun, Masakazu Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO2-masked sapphire substrates by molecular beam epitaxy (MBE). When ZnTe was grown at a high temperature (=350 °C), low growth rate (≦ 0.3 μm h−1), and low JTe/JZn flux ratio (≦ 0.83) compared with the conventional film growth conditions, the formation of ZnTe nuclei on the SiO2 mask was avoided. The Te flux intensity significantly affected the selectivity of ZnTe growth. The selective growth of ZnTe on sapphire was revealed to be limited by the desorption of Te adatoms from the SiO2.

Original languageEnglish
Pages (from-to)2265-2269
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Issue number11
Publication statusPublished - 2016 Nov 1


  • ZnTe
  • heteroepitaxy
  • molecular beam epitaxy
  • sapphire
  • selective growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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