Selective silicidation of Co using silane or disilane for anti-oxidation barrier layer in Cu metallization

Suguru Noda*, Rika Hirai, Hiroshi Komiyama, Yukihiro Shimogaki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Aiming to realize a conductive passivation layer for copper interconnection, the solid-gas reactions of cobalt films with silane and with disilane to form cobalt suicides are experimentally investigated. X-ray photoelectron spectroscopy revealed that cobalt suicides layers of up to 6 nm thickness can be selectively formed in the reaction at 473-673 K within 5 min without detectable silicon deposition on silicon dioxide, a common inter-metal dielectric layer. Rapid thermal oxidation experiments revealed that the silicided cobalt layers had better anti-oxidation performance than untreated cobalt layers, and the effect of silicidation was to suppress copper out-diffusion through the cobalt layers. Because cobalt-based alloys can be selectively electroless-plated on copper, selective silicidation of cobalt layers will be easily incorporated into device processing.

Original languageEnglish
Pages (from-to)6001-6007
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number9 A
Publication statusPublished - 2004 Sept
Externally publishedYes


  • Cobalt suicide
  • Conductive passivation layer
  • Copper metallization
  • Disilane
  • Selective silicidation
  • Silane

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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