Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth

Makoto Kasu; Toshiki Makimoto; Naoki Kobayashi

doi:10.1016/S0169-4332(98)00100-7

Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth

Makoto Kasu^*, Toshiki Makimoto, Naoki Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

We describe a selective area growth based on ultra-high-vacuum (UHV)-scanning-tunneling-microscopy (STM) lithography. After nitridation of GaAs surfaces and selective depassivation by UHV-STM, an array of uniform 6.4±0.8-nm high GaAs dots was successfully grown on the depassivated areas (50 nm×50 nm) using trimethylgallium (TMG) and tertiarybutylarsine. On the side walls of dots, (114) or (117) facets appeared. It was found that unintentional growth on the nitrided mask surface is due to TMG decomposition on the nitrided surface. The unintentional growth can be suppressed by using an amorphous-like nitrided surface and by increasing the thickness of the nitrided surface layer, and consequently the selectivity is improved.

Original language	English
Pages (from-to)	452-456
Number of pages	5
Journal	Applied Surface Science
Volume	130-132
DOIs	https://doi.org/10.1016/S0169-4332(98)00100-7
Publication status	Published - 1998
Externally published	Yes
Event	Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn Duration: 1997 Oct 27 → 1997 Oct 30

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces, Coatings and Films
Surfaces and Interfaces

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10.1016/S0169-4332(98)00100-7

Cite this

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title = "Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth",

abstract = "We describe a selective area growth based on ultra-high-vacuum (UHV)-scanning-tunneling-microscopy (STM) lithography. After nitridation of GaAs surfaces and selective depassivation by UHV-STM, an array of uniform 6.4±0.8-nm high GaAs dots was successfully grown on the depassivated areas (50 nm×50 nm) using trimethylgallium (TMG) and tertiarybutylarsine. On the side walls of dots, (114) or (117) facets appeared. It was found that unintentional growth on the nitrided mask surface is due to TMG decomposition on the nitrided surface. The unintentional growth can be suppressed by using an amorphous-like nitrided surface and by increasing the thickness of the nitrided surface layer, and consequently the selectivity is improved.",

author = "Makoto Kasu and Toshiki Makimoto and Naoki Kobayashi",

year = "1998",

doi = "10.1016/S0169-4332(98)00100-7",

language = "English",

volume = "130-132",

pages = "452--456",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

note = "Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 ; Conference date: 27-10-1997 Through 30-10-1997",

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TY - JOUR

T1 - Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth

AU - Kasu, Makoto

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 1998

Y1 - 1998

N2 - We describe a selective area growth based on ultra-high-vacuum (UHV)-scanning-tunneling-microscopy (STM) lithography. After nitridation of GaAs surfaces and selective depassivation by UHV-STM, an array of uniform 6.4±0.8-nm high GaAs dots was successfully grown on the depassivated areas (50 nm×50 nm) using trimethylgallium (TMG) and tertiarybutylarsine. On the side walls of dots, (114) or (117) facets appeared. It was found that unintentional growth on the nitrided mask surface is due to TMG decomposition on the nitrided surface. The unintentional growth can be suppressed by using an amorphous-like nitrided surface and by increasing the thickness of the nitrided surface layer, and consequently the selectivity is improved.

AB - We describe a selective area growth based on ultra-high-vacuum (UHV)-scanning-tunneling-microscopy (STM) lithography. After nitridation of GaAs surfaces and selective depassivation by UHV-STM, an array of uniform 6.4±0.8-nm high GaAs dots was successfully grown on the depassivated areas (50 nm×50 nm) using trimethylgallium (TMG) and tertiarybutylarsine. On the side walls of dots, (114) or (117) facets appeared. It was found that unintentional growth on the nitrided mask surface is due to TMG decomposition on the nitrided surface. The unintentional growth can be suppressed by using an amorphous-like nitrided surface and by increasing the thickness of the nitrided surface layer, and consequently the selectivity is improved.

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DO - 10.1016/S0169-4332(98)00100-7

M3 - Conference article

AN - SCOPUS:0032094938

SN - 0169-4332

VL - 130-132

SP - 452

EP - 456

JO - Applied Surface Science

JF - Applied Surface Science

T2 - Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4

Y2 - 27 October 1997 through 30 October 1997

ER -

Selectivity mechanism of all ultra high vacuum scanning tunneling microscopy based selective area growth

Abstract

ASJC Scopus subject areas

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