Shift-aligned GSG transitions through a silicon wafer

Tamotsu Nishino*, Yoshio Fujii, Hiroshi Fukumoto, Yukihisa Yoshida, Moriyasu Miyazaki, Tadashi Takagi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Transitions composed of three via-holes, which are aligned in triangular shape, is proposed. The transition realized a high-frequency signal path from the surface of a thick silicon wafer to the other side. To reduce the reflection loss, the signal via is disposed shifted. The transition is fabricated with our developing molten solder ejection method, which ejects small droplets of solder like an ink-jet-printer. Without utilizing thick metallizing process inside the holes, high aspect ratio structure was achieved. The height of the holes is 250μm in this study with diameter of 100μm. The measured results showed the shift-aligned GSG transition had 0.4dB loss at 40GHz.

Original languageEnglish
Title of host publication35th European Microwave Conference 2005 - Conference Proceedings
Pages173-175
Number of pages3
DOIs
Publication statusPublished - 2005
Externally publishedYes
Event2005 European Microwave Conference - Paris, France
Duration: 2005 Oct 42005 Oct 6

Publication series

Name35th European Microwave Conference 2005 - Conference Proceedings
Volume1

Conference

Conference2005 European Microwave Conference
Country/TerritoryFrance
CityParis
Period05/10/405/10/6

ASJC Scopus subject areas

  • General Engineering

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