@article{779740e1d30d41409fddc615fbb90883,
title = "Short exciton radiative lifetime in submonolayer InGaAsGaAs quantum dots",
abstract = "The exciton radiative lifetime in submonolayer (SML) InGaAsGaAs quantum dots (QDs) grown at 500 °C was measured by using time-resolved photoluminescence from 10 to 260 K. The radiative lifetime is around 90 ps and is independent of temperature below 50 K. The observed short radiative lifetime is a key reason for the high performance of SML QD devices and can be explained by the theory of Andreani [Phys. Rev. B 60, 13276 (1999)] calculating the radiative lifetime of QDs formed at the interface fluctuations of a quantum well, as the SML QDs are 20-30 nm in diameter and embedded within the lateral InGaAs QW.",
author = "Zhangcheng Xu and Yating Zhang and Atsushi Tackeuchi and Yoshiji Horikoshi and Hvam, {J{\o}rn M.}",
note = "Funding Information: This work has been supported by the National Natural Science Foundation of China (Grant Nos. 60506013, 10774078, and 60444010), Program for New Century Excellent Talents in University (NCET-06-0213), the Danish Technical Science Research Council, the SRF for ROCS (SEM), the Startup fund for new employees of Nankai University, and the Marubun Research Promotion Foundation. The authors thank Mr. Fujita, Mr. Kusuno, Mr. Ushiyama, and Dr. S. L. Lu for their assistance in TRPL measurements and Dr. Enomota for his assistance in TEM observations. The first author thanks Professor Zhanguo Wang, Professor Jingjun Xu, Professor Wei Lu, and Professor Xiaoshuang Chen for their help. ",
year = "2008",
doi = "10.1063/1.2839312",
language = "English",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",
}