Si island formation on domain boundaries induced by Ar ion irradiation on high-temperature Si(III)-7 × 7 dimer-adatom-stacking fault surfaces

Makoto Uchigasaki; Kenichi Tomiki; Takefumi Kamioka; Eiji Nakayama; Takanobu Watanabe; Iwao Ohdomari

doi:10.1143/JJAP.44.L313

Si island formation on domain boundaries induced by Ar ion irradiation on high-temperature Si(III)-7 × 7 dimer-adatom-stacking fault surfaces

Makoto Uchigasaki^*, Kenichi Tomiki, Takefumi Kamioka, Eiji Nakayama, Takanobu Watanabe, Iwao Ohdomari

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Using a low-energy ion gun/high-temperature scanning tunneling microscope combined system (IG/STM), we observed the atomic scale behavior of a Si surface kept at 500°C before, during and after Ar ion irradiation. We found that Si islands grew up within ion irradiation selectively along the boundaries of domains of 7 × 7 dimer-adatom-stacking (DAS) faults. The Si islands were 1 double atomic layer high and had the 7 × 7 DAS reconstruction. The area of the islands increased linearly with ion doses up to 2.5 × 10 ¹⁴ cm^-2.

Original language	English
Pages (from-to)	L313-L314
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	8-11
DOIs	https://doi.org/10.1143/JJAP.44.L313
Publication status	Published - 2005

Keywords

Annealing
Crystal growth
Point defect
Surface modification

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.44.L313

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Si island formation on domain boundaries induced by Ar ion irradiation on high-temperature Si(III)-7 × 7 dimer-adatom-stacking fault surfaces. / Uchigasaki, Makoto; Tomiki, Kenichi; Kamioka, Takefumi et al.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 44, No. 8-11, 2005, p. L313-L314.

Research output: Contribution to journal › Article › peer-review

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abstract = "Using a low-energy ion gun/high-temperature scanning tunneling microscope combined system (IG/STM), we observed the atomic scale behavior of a Si surface kept at 500°C before, during and after Ar ion irradiation. We found that Si islands grew up within ion irradiation selectively along the boundaries of domains of 7 × 7 dimer-adatom-stacking (DAS) faults. The Si islands were 1 double atomic layer high and had the 7 × 7 DAS reconstruction. The area of the islands increased linearly with ion doses up to 2.5 × 10 14 cm-2.",

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AU - Nakayama, Eiji

AU - Watanabe, Takanobu

AU - Ohdomari, Iwao

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N2 - Using a low-energy ion gun/high-temperature scanning tunneling microscope combined system (IG/STM), we observed the atomic scale behavior of a Si surface kept at 500°C before, during and after Ar ion irradiation. We found that Si islands grew up within ion irradiation selectively along the boundaries of domains of 7 × 7 dimer-adatom-stacking (DAS) faults. The Si islands were 1 double atomic layer high and had the 7 × 7 DAS reconstruction. The area of the islands increased linearly with ion doses up to 2.5 × 10 14 cm-2.

AB - Using a low-energy ion gun/high-temperature scanning tunneling microscope combined system (IG/STM), we observed the atomic scale behavior of a Si surface kept at 500°C before, during and after Ar ion irradiation. We found that Si islands grew up within ion irradiation selectively along the boundaries of domains of 7 × 7 dimer-adatom-stacking (DAS) faults. The Si islands were 1 double atomic layer high and had the 7 × 7 DAS reconstruction. The area of the islands increased linearly with ion doses up to 2.5 × 10 14 cm-2.

KW - Annealing

KW - Crystal growth

KW - Point defect

KW - Surface modification

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Si island formation on domain boundaries induced by Ar ion irradiation on high-temperature Si(III)-7 × 7 dimer-adatom-stacking fault surfaces

Abstract

Keywords

ASJC Scopus subject areas

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