Using a low-energy ion gun/high-temperature scanning tunneling microscope combined system (IG/STM), we observed the atomic scale behavior of a Si surface kept at 500°C before, during and after Ar ion irradiation. We found that Si islands grew up within ion irradiation selectively along the boundaries of domains of 7 × 7 dimer-adatom-stacking (DAS) faults. The Si islands were 1 double atomic layer high and had the 7 × 7 DAS reconstruction. The area of the islands increased linearly with ion doses up to 2.5 × 10 14 cm-2.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - 2005|
- Crystal growth
- Point defect
- Surface modification
ASJC Scopus subject areas
- Physics and Astronomy(all)