Si nano-photodiode with a surface plasmon antenna

Tsutomu Ishi*, Junichi Fujikata, Kikuo Marita, Toshio Baba, Keishi Ohashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

318 Citations (Scopus)


Nano-photodiodes with a subwavelength active area using the optical near-field enhanced by surface plasmon resonance are proposed. We fabricated a Si Schottky photodiode that consists of an active area of 300 nm in diameter and a surface plasmon antenna to generate the carrier within the active area efficiently. The fabricated photodiode shows an increase of the photocurrent by several tenfold compared to that without a surface plasmon antenna. This result suggests an enhanced photogeneration of carriers in a semiconductor via surface plasmon resonance. Such a Si nano-photodiode is a potential high-speed optical signal detector because the opto-electronic conversion process occurs within a subwavelength scale.

Original languageEnglish
Pages (from-to)L364-L366
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number12-15
Publication statusPublished - 2005
Externally publishedYes


  • Optical near-field
  • Photodiode
  • Subwavelength aperture
  • Surface plasmon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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