Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating

Takuma Aihara; Tatsurou Hiraki; Koji Takeda; Koichi Hasebe; Takuro Fujii; Tai Tsuchizawa; Takaaki Kakitsuka; Shinji Matsuo

doi:10.1109/ISLC.2018.8516177

Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating

Takuma Aihara, Tatsurou Hiraki, Koji Takeda, Koichi Hasebe, Takuro Fujii, Tai Tsuchizawa, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We have demonstrated 32-Gbit/s direct modulation of Si waveguide integrated membrane buried heterostructure laser with 500-μm-long cavity, whose cavity consists of a multiple phase-shift grating to suppress the spatial hole burning effect. The optical output power was 9 mW at a stage temperature of 25 C.

Original language	English
Title of host publication	26th International Semiconductor Laser Conference, ISLC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	83-84
Number of pages	2
ISBN (Electronic)	9781538664865
DOIs	https://doi.org/10.1109/ISLC.2018.8516177
Publication status	Published - 2018 Oct 30
Externally published	Yes
Event	26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States Duration: 2018 Sept 16 → 2018 Sept 19

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
Volume	2018-September
ISSN (Print)	0899-9406

Other

Other	26th International Semiconductor Laser Conference, ISLC 2018
Country/Territory	United States
City	Santa Fe
Period	18/9/16 → 18/9/19

Keywords

Membrane laser
Si photonics
direct modulation

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/ISLC.2018.8516177

Cite this

Aihara, T., Hiraki, T., Takeda, K., Hasebe, K., Fujii, T., Tsuchizawa, T., Kakitsuka, T., & Matsuo, S. (2018). Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating. In 26th International Semiconductor Laser Conference, ISLC 2018 (pp. 83-84). [8516177] (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2018.8516177

Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating. / Aihara, Takuma; Hiraki, Tatsurou; Takeda, Koji et al.
26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 83-84 8516177 (Conference Digest - IEEE International Semiconductor Laser Conference; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Aihara, T, Hiraki, T, Takeda, K, Hasebe, K, Fujii, T, Tsuchizawa, T, Kakitsuka, T & Matsuo, S 2018, Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating. in 26th International Semiconductor Laser Conference, ISLC 2018., 8516177, Conference Digest - IEEE International Semiconductor Laser Conference, vol. 2018-September, Institute of Electrical and Electronics Engineers Inc., pp. 83-84, 26th International Semiconductor Laser Conference, ISLC 2018, Santa Fe, United States, 18/9/16. https://doi.org/10.1109/ISLC.2018.8516177

Aihara T, Hiraki T, Takeda K, Hasebe K, Fujii T, Tsuchizawa T et al. Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating. In 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 83-84. 8516177. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.2018.8516177

Aihara, Takuma ; Hiraki, Tatsurou ; Takeda, Koji et al. / Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating. 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 83-84 (Conference Digest - IEEE International Semiconductor Laser Conference).

@inproceedings{be2e8dea5cf149a1bc1024a97b92c4dd,

title = "Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating",

abstract = "We have demonstrated 32-Gbit/s direct modulation of Si waveguide integrated membrane buried heterostructure laser with 500-μm-long cavity, whose cavity consists of a multiple phase-shift grating to suppress the spatial hole burning effect. The optical output power was 9 mW at a stage temperature of 25 C.",

keywords = "Membrane laser, Si photonics, direct modulation",

author = "Takuma Aihara and Tatsurou Hiraki and Koji Takeda and Koichi Hasebe and Takuro Fujii and Tai Tsuchizawa and Takaaki Kakitsuka and Shinji Matsuo",

year = "2018",

month = oct,

day = "30",

doi = "10.1109/ISLC.2018.8516177",

language = "English",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "83--84",

booktitle = "26th International Semiconductor Laser Conference, ISLC 2018",

note = "26th International Semiconductor Laser Conference, ISLC 2018 ; Conference date: 16-09-2018 Through 19-09-2018",

}

TY - GEN

T1 - Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating

AU - Aihara, Takuma

AU - Hiraki, Tatsurou

AU - Takeda, Koji

AU - Hasebe, Koichi

AU - Fujii, Takuro

AU - Tsuchizawa, Tai

AU - Kakitsuka, Takaaki

AU - Matsuo, Shinji

PY - 2018/10/30

Y1 - 2018/10/30

N2 - We have demonstrated 32-Gbit/s direct modulation of Si waveguide integrated membrane buried heterostructure laser with 500-μm-long cavity, whose cavity consists of a multiple phase-shift grating to suppress the spatial hole burning effect. The optical output power was 9 mW at a stage temperature of 25 C.

AB - We have demonstrated 32-Gbit/s direct modulation of Si waveguide integrated membrane buried heterostructure laser with 500-μm-long cavity, whose cavity consists of a multiple phase-shift grating to suppress the spatial hole burning effect. The optical output power was 9 mW at a stage temperature of 25 C.

KW - Membrane laser

KW - Si photonics

KW - direct modulation

UR - http://www.scopus.com/inward/record.url?scp=85057360604&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85057360604&partnerID=8YFLogxK

U2 - 10.1109/ISLC.2018.8516177

DO - 10.1109/ISLC.2018.8516177

M3 - Conference contribution

AN - SCOPUS:85057360604

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 83

EP - 84

BT - 26th International Semiconductor Laser Conference, ISLC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 26th International Semiconductor Laser Conference, ISLC 2018

Y2 - 16 September 2018 through 19 September 2018

ER -

Si Waveguide Integrated Membrane Buried Heterostructure DFB Laser using SiN Multiple-Phase-Shift Surface Grating

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Keywords

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