TY - GEN
T1 - SiC-SiC temporary bonding compatible with rapid thermal annealing at 1000 °c
AU - Mu, Fengwen
AU - Suga, Tadatomo
AU - Uomoto, Miyuki
AU - Shimatsu, Takehito
AU - Iguchi, Kenichi
AU - Nakazawa, Haruo
PY - 2019/5/1
Y1 - 2019/5/1
N2 - A SiC-SiC temporary bonding compatible with rapid thermal annealing at \sim 1000^{\circ } \mathrm{C} has been realized. Two SiC wafers were bonded at room temperature via an intermediate Ni nano-film. After the rapid thermal annealing, the bonding was dramatically weakened and the de-bonding could be achieved at the interface. The mechanisms of this temporary bonding method has been investigated through interface analyses.
AB - A SiC-SiC temporary bonding compatible with rapid thermal annealing at \sim 1000^{\circ } \mathrm{C} has been realized. Two SiC wafers were bonded at room temperature via an intermediate Ni nano-film. After the rapid thermal annealing, the bonding was dramatically weakened and the de-bonding could be achieved at the interface. The mechanisms of this temporary bonding method has been investigated through interface analyses.
UR - http://www.scopus.com/inward/record.url?scp=85068368727&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068368727&partnerID=8YFLogxK
U2 - 10.23919/LTB-3D.2019.8735291
DO - 10.23919/LTB-3D.2019.8735291
M3 - Conference contribution
AN - SCOPUS:85068368727
T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Y2 - 21 May 2019 through 25 May 2019
ER -