Silicon-based micro thermoelectric generator fabricated by CMOS compatible process

Takanobu Watanabe

doi:10.1109/IMFEDK.2017.7998023

Silicon-based micro thermoelectric generator fabricated by CMOS compatible process

Takanobu Watanabe^*

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Energy harvester is a key device for realizing trillion sensors network society. Thermoelectric generator (TEG) is regarded as the ultimate energy harvester to provide semipermanent power from heat energies via Seebeck effect. The recent discovery of the superior thermoelectric (TE) property of silicon nanowires (Si-NWs) opens the way for Si-based TEGs. In this paper, a very simple device architecture of Si-based micro TEG is proposed. It can be fabricated by the CMOS-compatible process, and the TE power density is found to be scalable by miniaturizing and integrating the structure.

Original language	English
Title of host publication	IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	22-23
Number of pages	2
ISBN (Electronic)	9781509039913
DOIs	https://doi.org/10.1109/IMFEDK.2017.7998023
Publication status	Published - 2017 Jul 31
Event	15th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2017 - Kyoto, Japan Duration: 2017 Jun 29 → 2017 Jun 30

Publication series

Name	IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai

Other

Other	15th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2017
Country/Territory	Japan
City	Kyoto
Period	17/6/29 → 17/6/30

Keywords

Si nanowaire
energy harvester
themoelectrics

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

Access to Document

10.1109/IMFEDK.2017.7998023

Cite this

Watanabe, T. (2017). Silicon-based micro thermoelectric generator fabricated by CMOS compatible process. In IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai (pp. 22-23). [7998023] (IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMFEDK.2017.7998023

Silicon-based micro thermoelectric generator fabricated by CMOS compatible process. / Watanabe, Takanobu.
IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc., 2017. p. 22-23 7998023 (IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Watanabe, T 2017, Silicon-based micro thermoelectric generator fabricated by CMOS compatible process. in IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai., 7998023, IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai, Institute of Electrical and Electronics Engineers Inc., pp. 22-23, 15th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2017, Kyoto, Japan, 17/6/29. https://doi.org/10.1109/IMFEDK.2017.7998023

Watanabe T. Silicon-based micro thermoelectric generator fabricated by CMOS compatible process. In IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc. 2017. p. 22-23. 7998023. (IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai). doi: 10.1109/IMFEDK.2017.7998023

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note = "Funding Information: ACKNOWLEDGMENT This work was supported by the JPMJCR15Q7, of Japan Science Corporation (JST). Publisher Copyright: {\textcopyright} 2017 IEEE.; 15th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2017 ; Conference date: 29-06-2017 Through 30-06-2017",

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Silicon-based micro thermoelectric generator fabricated by CMOS compatible process

Abstract

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Keywords

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