TY - JOUR
T1 - Silicon electrodeposition in a water-soluble KF–KCl molten salt
T2 - Utilization of SiCl4 as Si source
AU - Yasuda, Kouji
AU - Maeda, Kazuma
AU - Hagiwara, Rika
AU - Homma, Takayuki
AU - Nohira, Toshiyuki
N1 - Funding Information:
This study was partly supported by the Core Research for Evolutionary Science and Technology (CREST) of the Japan Science and Technology Agency (JST).
Publisher Copyright:
© The Author(s) 2016. Published by ECS. All rights reserved.
PY - 2017
Y1 - 2017
N2 - The electrodeposition of Si was investigated in a molten KF–KCl salt mixture (eutectic composition, 45:55 mol%) after the introduction of SiCl4 to demonstrate a new production method for solar cell substrates. Gaseous SiCl4 was introduced directly into the molten salt at 1023 K by a vapor transport method using Ar as a carrier gas. The dissolution efficiency of SiCl4 exceeded 80% even when a simple tube was used for bubbling. Galvanostatic electrolysis was conducted at 923 K on a Ag substrate at 155 mA cm−2 for 20 min in the molten KF–KCl salt mixture after the dissolution of 2.30 mol% SiCl4. Although a compact Si layer was formed, its smoothness was inferior to that obtained from the melt after the addition of K2SiF6. The molar fraction of the fluoride anion is suggested as one of the factors affecting the morphology of the deposits.
AB - The electrodeposition of Si was investigated in a molten KF–KCl salt mixture (eutectic composition, 45:55 mol%) after the introduction of SiCl4 to demonstrate a new production method for solar cell substrates. Gaseous SiCl4 was introduced directly into the molten salt at 1023 K by a vapor transport method using Ar as a carrier gas. The dissolution efficiency of SiCl4 exceeded 80% even when a simple tube was used for bubbling. Galvanostatic electrolysis was conducted at 923 K on a Ag substrate at 155 mA cm−2 for 20 min in the molten KF–KCl salt mixture after the dissolution of 2.30 mol% SiCl4. Although a compact Si layer was formed, its smoothness was inferior to that obtained from the melt after the addition of K2SiF6. The molar fraction of the fluoride anion is suggested as one of the factors affecting the morphology of the deposits.
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U2 - 10.1149/2.0641702jes
DO - 10.1149/2.0641702jes
M3 - Article
AN - SCOPUS:85033799686
SN - 0013-4651
VL - 164
SP - D67-D71
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
IS - 2
ER -
