Silicon micro/nanofabrication using metastable helium atom beam lithography

Z. P. Wang, M. Kurahashi, T. Suzuki, Z. J. Ding, Y. Yamauchi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We utilize metastable helium (He*) atom beam lithography to pattern silicon substrates by using self-assembled monolayer (SAM) of octadecyltrichlorosilane (OTS) grown directly on silicon surface as resist. An improved wet-chemical etching method was used to transfer the resist pattern into silicon substrate. Negative and positive pattern formations with well-defined edges were observed for silicon(1 00) substrate with SAM after exposure to the He* atom beam followed by the etching. Results indicate a clear transition from positive to negative patterns relies on the He* dosage. The pattern sizes on silicon were successfully decreased to the order of 100 nm, even less than 50 nm.

Original languageEnglish
Pages (from-to)7443-7446
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number11
Publication statusPublished - 2010 Nov
Externally publishedYes


  • Atom lithography
  • Metastable helium (He*)
  • Self-assembled monolayer

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics


Dive into the research topics of 'Silicon micro/nanofabrication using metastable helium atom beam lithography'. Together they form a unique fingerprint.

Cite this