TY - GEN
T1 - Silicon on thin buried oxide (SOTB) technology for ultralow-power applications
AU - Sugii, N.
AU - Iwamatsu, T.
AU - Yamamoto, Y.
AU - Makiyama, H.
AU - Shinohara, H.
AU - Aono, H.
AU - Oda, H.
AU - Kamohara, S.
AU - Yamaguchi, Y.
AU - Mizutani, T.
AU - Hiramoto, Toshiro
PY - 2013
Y1 - 2013
N2 - Demands for low-power CMOS devices are still increasing. Ultralow-voltage operation of CMOS with maximum power efficiency can extend the opportunity of using the electron devices to power-conscious applications such as ubiquitous sensor network, etc. The main issues for low-power (highly efficient) operation of the modern scaled CMOS are reducing variability and enabling adaptive control of circuit performance and power consumption under the operation at voltages as low as possible. In order to solve these issues, we are developing the silicon-on-thin-buried-oxide (SOTB) transistors. We show features of the SOTB, transistor technology dedicated for ultralow-voltage (down to 0.4 V) operation, circuit design applicable for SOTB and we discuss on the performance projection and ULV application with SOTB.
AB - Demands for low-power CMOS devices are still increasing. Ultralow-voltage operation of CMOS with maximum power efficiency can extend the opportunity of using the electron devices to power-conscious applications such as ubiquitous sensor network, etc. The main issues for low-power (highly efficient) operation of the modern scaled CMOS are reducing variability and enabling adaptive control of circuit performance and power consumption under the operation at voltages as low as possible. In order to solve these issues, we are developing the silicon-on-thin-buried-oxide (SOTB) transistors. We show features of the SOTB, transistor technology dedicated for ultralow-voltage (down to 0.4 V) operation, circuit design applicable for SOTB and we discuss on the performance projection and ULV application with SOTB.
UR - http://www.scopus.com/inward/record.url?scp=84885676697&partnerID=8YFLogxK
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U2 - 10.1149/05401.0189ecst
DO - 10.1149/05401.0189ecst
M3 - Conference contribution
AN - SCOPUS:84885676697
SN - 9781607684435
T3 - ECS Transactions
SP - 189
EP - 196
BT - 2013 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 4
T2 - 4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT 2013
Y2 - 7 July 2013 through 12 July 2013
ER -