TY - JOUR
T1 - Simple method for fabrication of diamond nanowires by inductively coupled plasma reactive ion etching
AU - Wakui, Kentaro
AU - Yonezu, Yuya
AU - Aoki, Takao
AU - Takeoka, Masahiro
AU - Semba, Kouichi
N1 - Funding Information:
KW wishes to thank S. Nakajima, A. Kanno, M. Tamura, Y. Yamashita, I. Watanabe, and K. Furusawa for discussions, and thank the staff of the Photonic Device Laboratory at NICT for technical support. This work was supported in part by a Grant-in-Aid for Scientific Research (S) (Grant No. 25220601) by the Japan Society for the Promotion of Science (JSPS). YY acknowledges the Leading Graduate Program in Science and Engineering, Waseda University from the Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT).
Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/5
Y1 - 2017/5
N2 - Diamond nanowires are fabricated on a bulk, single crystalline diamond near an edge of aluminum coating using inductively coupled plasma reactive ion etching. Two different density areas are simultaneously appeared where the dense area has 9 times higher density than that of the sparse area while keeping the size of nanowires almost uniform in these areas. The nanowire sizes realized in the dense (sparse) area are 858 ± 22nm (876 ± 25nm) in height and 126 ± 6 nm (124 ± 7 nm) in diameter, which is suitable for applications in optical quantum information processing.
AB - Diamond nanowires are fabricated on a bulk, single crystalline diamond near an edge of aluminum coating using inductively coupled plasma reactive ion etching. Two different density areas are simultaneously appeared where the dense area has 9 times higher density than that of the sparse area while keeping the size of nanowires almost uniform in these areas. The nanowire sizes realized in the dense (sparse) area are 858 ± 22nm (876 ± 25nm) in height and 126 ± 6 nm (124 ± 7 nm) in diameter, which is suitable for applications in optical quantum information processing.
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U2 - 10.7567/JJAP.56.058005
DO - 10.7567/JJAP.56.058005
M3 - Article
AN - SCOPUS:85018400704
SN - 0021-4922
VL - 56
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 5
M1 - 058005
ER -