Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS

K. Shih; M. Nimura; Y. Kanehira; T. Ogashiwa; J. Mizuno; S. Shoji

doi:10.1109/MEMSYS.2013.6474237

Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS

K. Shih^*, M. Nimura, Y. Kanehira, T. Ogashiwa, J. Mizuno, S. Shoji

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We developed a novel through silicon via (TSV) fabrication process using dry filling of sub-micron Au particle for stack type 3D MEMS. X-ray image shows that the slurry including Au particles was uniformly filled into vias with squeegee under low pressure in short time. TSV with a diameter of 30 μm and depth of 70μm were successfully fabricated. The resistance of single TSV was 0.11 Ω. The dielectric withstanding voltage of SiO₂ insulating layer was about 150 V. The result indicates that high through put fabrication of TSV for 3D MEMS can be realized with a simple method.

Original language	English
Title of host publication	IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
Pages	299-302
Number of pages	4
DOIs	https://doi.org/10.1109/MEMSYS.2013.6474237
Publication status	Published - 2013 Apr 2
Event	IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013 - Taipei, Taiwan, Province of China Duration: 2013 Jan 20 → 2013 Jan 24

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)	1084-6999

Conference

Conference	IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013
Country/Territory	Taiwan, Province of China
City	Taipei
Period	13/1/20 → 13/1/24

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
Electrical and Electronic Engineering

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10.1109/MEMSYS.2013.6474237

Cite this

Shih, K., Nimura, M., Kanehira, Y., Ogashiwa, T., Mizuno, J., & Shoji, S. (2013). Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS. In IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013 (pp. 299-302). [6474237] (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). https://doi.org/10.1109/MEMSYS.2013.6474237

Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS. / Shih, K.; Nimura, M.; Kanehira, Y. et al.
IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013. 2013. p. 299-302 6474237 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shih, K, Nimura, M, Kanehira, Y, Ogashiwa, T, Mizuno, J & Shoji, S 2013, Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS. in IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013., 6474237, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), pp. 299-302, IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013, Taipei, Taiwan, Province of China, 13/1/20. https://doi.org/10.1109/MEMSYS.2013.6474237

Shih K, Nimura M, Kanehira Y, Ogashiwa T, Mizuno J, Shoji S. Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS. In IEEE 26th International Conference on Micro Electro Mechanical Systems, MEMS 2013. 2013. p. 299-302. 6474237. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). doi: 10.1109/MEMSYS.2013.6474237

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title = "Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS",

abstract = "We developed a novel through silicon via (TSV) fabrication process using dry filling of sub-micron Au particle for stack type 3D MEMS. X-ray image shows that the slurry including Au particles was uniformly filled into vias with squeegee under low pressure in short time. TSV with a diameter of 30 μm and depth of 70μm were successfully fabricated. The resistance of single TSV was 0.11 Ω. The dielectric withstanding voltage of SiO2 insulating layer was about 150 V. The result indicates that high through put fabrication of TSV for 3D MEMS can be realized with a simple method.",

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AU - Shih, K.

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AU - Shoji, S.

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N2 - We developed a novel through silicon via (TSV) fabrication process using dry filling of sub-micron Au particle for stack type 3D MEMS. X-ray image shows that the slurry including Au particles was uniformly filled into vias with squeegee under low pressure in short time. TSV with a diameter of 30 μm and depth of 70μm were successfully fabricated. The resistance of single TSV was 0.11 Ω. The dielectric withstanding voltage of SiO2 insulating layer was about 150 V. The result indicates that high through put fabrication of TSV for 3D MEMS can be realized with a simple method.

AB - We developed a novel through silicon via (TSV) fabrication process using dry filling of sub-micron Au particle for stack type 3D MEMS. X-ray image shows that the slurry including Au particles was uniformly filled into vias with squeegee under low pressure in short time. TSV with a diameter of 30 μm and depth of 70μm were successfully fabricated. The resistance of single TSV was 0.11 Ω. The dielectric withstanding voltage of SiO2 insulating layer was about 150 V. The result indicates that high through put fabrication of TSV for 3D MEMS can be realized with a simple method.

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Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS

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