SIMS depth profile study using metal cluster complex ion bombardment

M. Tomita; T. Kinno; M. Koike; H. Tanaka; S. Takeno; Y. Fujiwara; K. Kondou; Y. Teranishi; H. Nonaka; T. Fujimoto; A. Kurokawa; S. Ichimura

doi:10.1016/j.nimb.2006.12.109

SIMS depth profile study using metal cluster complex ion bombardment

M. Tomita^*, T. Kinno, M. Koike, H. Tanaka, S. Takeno, Y. Fujiwara, K. Kondou, Y. Teranishi, H. Nonaka, T. Fujimoto, A. Kurokawa, S. Ichimura

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

SIMS depth profiles using a metal cluster complex ion of Ir₄ (CO)₇⁺ were studied. An unusual increase of the sputtering yield under the condition of small incident angle may be attributed to the suppression of taking oxygen from flooding O₂ by the formation of a carbon cover-layer derived from Ir₄ (CO)₇⁺ ion. Even though the roughness of the sputtered surface is small, the depth resolution was not improved by decreasing the cluster ion energy to less than 5 keV, because the carbon cover-layer prevents the formation of surface oxide that buffers atomic mixing. To overcome this issue, it will be necessary to eliminate carbon from the cluster ion.

Original language	English
Pages (from-to)	242-245
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	258
Issue number	1
DOIs	https://doi.org/10.1016/j.nimb.2006.12.109
Publication status	Published - 2007 May
Externally published	Yes

Keywords

Cluster ion
Depth profile
Depth resolution
Ir (CO)
SIMS
Sputtering yield

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nimb.2006.12.109

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Tomita, M., Kinno, T., Koike, M., Tanaka, H., Takeno, S., Fujiwara, Y., Kondou, K., Teranishi, Y., Nonaka, H., Fujimoto, T., Kurokawa, A., & Ichimura, S. (2007). SIMS depth profile study using metal cluster complex ion bombardment. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 258(1), 242-245. https://doi.org/10.1016/j.nimb.2006.12.109

Tomita, M, Kinno, T, Koike, M, Tanaka, H, Takeno, S, Fujiwara, Y, Kondou, K, Teranishi, Y, Nonaka, H, Fujimoto, T, Kurokawa, A & Ichimura, S 2007, 'SIMS depth profile study using metal cluster complex ion bombardment', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 258, no. 1, pp. 242-245. https://doi.org/10.1016/j.nimb.2006.12.109

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title = "SIMS depth profile study using metal cluster complex ion bombardment",

abstract = "SIMS depth profiles using a metal cluster complex ion of Ir4 (CO)7+ were studied. An unusual increase of the sputtering yield under the condition of small incident angle may be attributed to the suppression of taking oxygen from flooding O2 by the formation of a carbon cover-layer derived from Ir4 (CO)7+ ion. Even though the roughness of the sputtered surface is small, the depth resolution was not improved by decreasing the cluster ion energy to less than 5 keV, because the carbon cover-layer prevents the formation of surface oxide that buffers atomic mixing. To overcome this issue, it will be necessary to eliminate carbon from the cluster ion.",

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author = "M. Tomita and T. Kinno and M. Koike and H. Tanaka and S. Takeno and Y. Fujiwara and K. Kondou and Y. Teranishi and H. Nonaka and T. Fujimoto and A. Kurokawa and S. Ichimura",

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T1 - SIMS depth profile study using metal cluster complex ion bombardment

AU - Tomita, M.

AU - Kinno, T.

AU - Koike, M.

AU - Tanaka, H.

AU - Takeno, S.

AU - Fujiwara, Y.

AU - Kondou, K.

AU - Teranishi, Y.

AU - Nonaka, H.

AU - Fujimoto, T.

AU - Kurokawa, A.

AU - Ichimura, S.

PY - 2007/5

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N2 - SIMS depth profiles using a metal cluster complex ion of Ir4 (CO)7+ were studied. An unusual increase of the sputtering yield under the condition of small incident angle may be attributed to the suppression of taking oxygen from flooding O2 by the formation of a carbon cover-layer derived from Ir4 (CO)7+ ion. Even though the roughness of the sputtered surface is small, the depth resolution was not improved by decreasing the cluster ion energy to less than 5 keV, because the carbon cover-layer prevents the formation of surface oxide that buffers atomic mixing. To overcome this issue, it will be necessary to eliminate carbon from the cluster ion.

AB - SIMS depth profiles using a metal cluster complex ion of Ir4 (CO)7+ were studied. An unusual increase of the sputtering yield under the condition of small incident angle may be attributed to the suppression of taking oxygen from flooding O2 by the formation of a carbon cover-layer derived from Ir4 (CO)7+ ion. Even though the roughness of the sputtered surface is small, the depth resolution was not improved by decreasing the cluster ion energy to less than 5 keV, because the carbon cover-layer prevents the formation of surface oxide that buffers atomic mixing. To overcome this issue, it will be necessary to eliminate carbon from the cluster ion.

KW - Cluster ion

KW - Depth profile

KW - Depth resolution

KW - Ir (CO)

KW - SIMS

KW - Sputtering yield

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SIMS depth profile study using metal cluster complex ion bombardment

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Keywords

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