SIMS depth profile study using metal cluster complex ion bombardment

M. Tomita*, T. Kinno, M. Koike, H. Tanaka, S. Takeno, Y. Fujiwara, K. Kondou, Y. Teranishi, H. Nonaka, T. Fujimoto, A. Kurokawa, S. Ichimura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


SIMS depth profiles using a metal cluster complex ion of Ir4 (CO)7+ were studied. An unusual increase of the sputtering yield under the condition of small incident angle may be attributed to the suppression of taking oxygen from flooding O2 by the formation of a carbon cover-layer derived from Ir4 (CO)7+ ion. Even though the roughness of the sputtered surface is small, the depth resolution was not improved by decreasing the cluster ion energy to less than 5 keV, because the carbon cover-layer prevents the formation of surface oxide that buffers atomic mixing. To overcome this issue, it will be necessary to eliminate carbon from the cluster ion.

Original languageEnglish
Pages (from-to)242-245
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1
Publication statusPublished - 2007 May
Externally publishedYes


  • Cluster ion
  • Depth profile
  • Depth resolution
  • Ir (CO)
  • SIMS
  • Sputtering yield

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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