Single-walled carbon nanotube aggregates for solution-processed field effect transistors

Masashi Shiraishi; Taishi Takenobu; Toshinori Iwai; Yoshihiro Iwasa; Hiromichi Kataura; Masafumi Ata

doi:10.1016/j.cplett.2004.06.130

Single-walled carbon nanotube aggregates for solution-processed field effect transistors

Masashi Shiraishi, Taishi Takenobu, Toshinori Iwai, Yoshihiro Iwasa, Hiromichi Kataura, Masafumi Ata

Research output: Contribution to journal › Article › peer-review

78 Citations (Scopus)

Abstract

Characteristics of aggregated single-walled carbon nanotube (SWNT) as a channel of field effect transistors (FETs) were examined. SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm ²/V s, ≈100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, and the present product exhibited the ambipolar character observed in individual-SWNT-FETs.

Original language	English
Pages (from-to)	110-113
Number of pages	4
Journal	Chemical Physics Letters
Volume	394
Issue number	1-3
DOIs	https://doi.org/10.1016/j.cplett.2004.06.130
Publication status	Published - 2004 Aug 11
Externally published	Yes

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Spectroscopy
Atomic and Molecular Physics, and Optics

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title = "Single-walled carbon nanotube aggregates for solution-processed field effect transistors",

abstract = "Characteristics of aggregated single-walled carbon nanotube (SWNT) as a channel of field effect transistors (FETs) were examined. SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm 2/V s, ≈100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, and the present product exhibited the ambipolar character observed in individual-SWNT-FETs.",

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AU - Shiraishi, Masashi

AU - Takenobu, Taishi

AU - Iwai, Toshinori

AU - Iwasa, Yoshihiro

AU - Kataura, Hiromichi

AU - Ata, Masafumi

PY - 2004/8/11

Y1 - 2004/8/11

N2 - Characteristics of aggregated single-walled carbon nanotube (SWNT) as a channel of field effect transistors (FETs) were examined. SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm 2/V s, ≈100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, and the present product exhibited the ambipolar character observed in individual-SWNT-FETs.

AB - Characteristics of aggregated single-walled carbon nanotube (SWNT) as a channel of field effect transistors (FETs) were examined. SWNTs were dispersed in a solution of dimethylformamide in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm 2/V s, ≈100 times as high as those reported for other solution-processed organic thin-film FETs formed by solution processes, and the present product exhibited the ambipolar character observed in individual-SWNT-FETs.

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Single-walled carbon nanotube aggregates for solution-processed field effect transistors

Abstract

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