TY - JOUR
T1 - SiO2 dielectric film formation by alternate supply of organic silicon gas and highly concentrated ozone gas at below 300°C
AU - Nishiguchi, Tetsuya
AU - Noyori, Takeshi
AU - Morikawa, Yoshiki
AU - Kekura, Mitsuru
AU - Nonaka, Hidehiko
AU - Ichimura, Shingo
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2005
Y1 - 2005
N2 - We have deposited silicon dioxide (SiO2) film at temperatures lower than 300°C by supplying Hexamethyldisilazane (HMDS) and 03 gas with nearly 100% concentration alternately and cyclically. The 100%-03 gas has confirmed to be reactive enough to decompose the HMDS gas into CO2, H2O as well as the precursors leading to SiO2 deposition such as SiO even at room temperature. The physical characterization of thus deposited film gives a refractive index of 1.45-1.51, no Si-CH3 bond content and a process-dependent Si-OH content in the film. The film deposited by 10 Pa-HMDS and 2700 Pa-100%-O3 alternate supply has had a minimum Si-OH content and a good insulating property, i.e., leakage current density of lower than 10-7 A/cm2 at the electric field application of 4 MV/cm. This property is better than the film deposited by plasma-enhanced chemical-vapor-deposition using SiH4/O2 gas at 350°C.
AB - We have deposited silicon dioxide (SiO2) film at temperatures lower than 300°C by supplying Hexamethyldisilazane (HMDS) and 03 gas with nearly 100% concentration alternately and cyclically. The 100%-03 gas has confirmed to be reactive enough to decompose the HMDS gas into CO2, H2O as well as the precursors leading to SiO2 deposition such as SiO even at room temperature. The physical characterization of thus deposited film gives a refractive index of 1.45-1.51, no Si-CH3 bond content and a process-dependent Si-OH content in the film. The film deposited by 10 Pa-HMDS and 2700 Pa-100%-O3 alternate supply has had a minimum Si-OH content and a good insulating property, i.e., leakage current density of lower than 10-7 A/cm2 at the electric field application of 4 MV/cm. This property is better than the film deposited by plasma-enhanced chemical-vapor-deposition using SiH4/O2 gas at 350°C.
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U2 - 10.3131/jvsj.48.313
DO - 10.3131/jvsj.48.313
M3 - Article
AN - SCOPUS:23344439220
SN - 0559-8516
VL - 48
SP - 313
EP - 316
JO - Shinku/Journal of the Vacuum Society of Japan
JF - Shinku/Journal of the Vacuum Society of Japan
IS - 5
ER -