SiOxNy back-end integration technologies for heterogeneously integrated Si platform

H. Nishi; T. Tsuchizawa; T. Kakitsuka; K. Hasebe; K. Takeda; T. Hiraki; T. Fujii; T. Yamamoto; S. Matsuo

doi:10.1149/07508.0211ecst

SiO_xN_y back-end integration technologies for heterogeneously integrated Si platform

H. Nishi, T. Tsuchizawa, T. Kakitsuka, K. Hasebe, K. Takeda, T. Hiraki, T. Fujii, T. Yamamoto, S. Matsuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Photonic integrated circuits on Si have been attracting much attention and are being intensively investigated. On a Si photonic chip, in addition to the monolithic Si and Ge photonic devices, InP-based active devices can be integrated heterogeneously by utilizing direct-bonding technology. To connect these functional devices, we have proposed back-end photonic wiring using silicon oxynitride (SiO_xN_y) -based waveguides. In this paper, we report recent progress in our back-end photonics integration technology. First, back-end SiOx waveguide integration with InP-based membrane active devices will be presented. Then, our technology for the low-loss SiO_xN_y deposition at low temperature will be presented, which is applied to a SiN waveguide for compact arrayed-waveguide-grating (AWG) filter and Ge integration. These technologies have attributes for future highly integrated photonic circuits on Si.

Original language	English
Title of host publication	SiGe, Ge, and Related Materials
Subtitle of host publication	Materials, Processing, and Devices 7
Editors	J. Murota, B. Tillack, M. Caymax, G. Masini, D. L. Harame, S. Miyazaki
Publisher	Electrochemical Society Inc.
Pages	211-221
Number of pages	11
Edition	8
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/07508.0211ecst
Publication status	Published - 2016
Externally published	Yes
Event	Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: 2016 Oct 2 → 2016 Oct 7

Publication series

Name	ECS Transactions
Number	8
Volume	75
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting
Country/Territory	United States
City	Honolulu
Period	16/10/2 → 16/10/7

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/07508.0211ecst

Cite this

Nishi, H., Tsuchizawa, T., Kakitsuka, T., Hasebe, K., Takeda, K., Hiraki, T., Fujii, T., Yamamoto, T., & Matsuo, S. (2016). SiO_xN_y back-end integration technologies for heterogeneously integrated Si platform. In J. Murota, B. Tillack, M. Caymax, G. Masini, D. L. Harame, & S. Miyazaki (Eds.), SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 (8 ed., pp. 211-221). (ECS Transactions; Vol. 75, No. 8). Electrochemical Society Inc.. https://doi.org/10.1149/07508.0211ecst

SiO_xN_y back-end integration technologies for heterogeneously integrated Si platform. / Nishi, H.; Tsuchizawa, T.; Kakitsuka, T. et al.
SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. ed. / J. Murota; B. Tillack; M. Caymax; G. Masini; D. L. Harame; S. Miyazaki. 8. ed. Electrochemical Society Inc., 2016. p. 211-221 (ECS Transactions; Vol. 75, No. 8).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nishi, H, Tsuchizawa, T, Kakitsuka, T, Hasebe, K, Takeda, K, Hiraki, T, Fujii, T, Yamamoto, T & Matsuo, S 2016, SiO_xN_y back-end integration technologies for heterogeneously integrated Si platform. in J Murota, B Tillack, M Caymax, G Masini, DL Harame & S Miyazaki (eds), SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. 8 edn, ECS Transactions, no. 8, vol. 75, Electrochemical Society Inc., pp. 211-221, Symposium on SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 16/10/2. https://doi.org/10.1149/07508.0211ecst

Nishi H, Tsuchizawa T, Kakitsuka T, Hasebe K, Takeda K, Hiraki T et al. SiO_xN_y back-end integration technologies for heterogeneously integrated Si platform. In Murota J, Tillack B, Caymax M, Masini G, Harame DL, Miyazaki S, editors, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. 8 ed. Electrochemical Society Inc. 2016. p. 211-221. (ECS Transactions; 8). doi: 10.1149/07508.0211ecst

Nishi, H. ; Tsuchizawa, T. ; Kakitsuka, T. et al. / SiO_xN_y back-end integration technologies for heterogeneously integrated Si platform. SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. editor / J. Murota ; B. Tillack ; M. Caymax ; G. Masini ; D. L. Harame ; S. Miyazaki. 8. ed. Electrochemical Society Inc., 2016. pp. 211-221 (ECS Transactions; 8).

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abstract = "Photonic integrated circuits on Si have been attracting much attention and are being intensively investigated. On a Si photonic chip, in addition to the monolithic Si and Ge photonic devices, InP-based active devices can be integrated heterogeneously by utilizing direct-bonding technology. To connect these functional devices, we have proposed back-end photonic wiring using silicon oxynitride (SiOxNy) -based waveguides. In this paper, we report recent progress in our back-end photonics integration technology. First, back-end SiOx waveguide integration with InP-based membrane active devices will be presented. Then, our technology for the low-loss SiOxNy deposition at low temperature will be presented, which is applied to a SiN waveguide for compact arrayed-waveguide-grating (AWG) filter and Ge integration. These technologies have attributes for future highly integrated photonic circuits on Si.",

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AB - Photonic integrated circuits on Si have been attracting much attention and are being intensively investigated. On a Si photonic chip, in addition to the monolithic Si and Ge photonic devices, InP-based active devices can be integrated heterogeneously by utilizing direct-bonding technology. To connect these functional devices, we have proposed back-end photonic wiring using silicon oxynitride (SiOxNy) -based waveguides. In this paper, we report recent progress in our back-end photonics integration technology. First, back-end SiOx waveguide integration with InP-based membrane active devices will be presented. Then, our technology for the low-loss SiOxNy deposition at low temperature will be presented, which is applied to a SiN waveguide for compact arrayed-waveguide-grating (AWG) filter and Ge integration. These technologies have attributes for future highly integrated photonic circuits on Si.

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