Size dependence of carrier recombination efficiency in GaN quantum dots

Arup Neogi*, Henry Everitt, Hadis Morkoç, Takamasa Kuroda, Atsushi Tackeuchi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The dependence of radiative recombination rate and efficiency on GaN quantum-dot (QD) size and temperature is studied by time-resolved photoluminescence (PL) spectroscopy. The emission is dominated by radiative recombination at low temperatures (<125 K) and exhibits high PL efficiency at room temperature. The radiative lifetime and the relative quantum efficiency decrease with the decreasing QD size.

Original languageEnglish
Pages (from-to)297-299
Number of pages3
JournalIEEE Transactions on Nanotechnology
Issue number2
Publication statusPublished - 2005 Mar


  • GaN
  • Molecular-beam epitaxy
  • Quantum dots (QDs)
  • Semiconductor nanostructures
  • Time-resolved photoluminescence (PL)

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering


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