Size dependence of carrier recombination efficiency in GaN quantum dots

Arup Neogi; Henry Everitt; Hadis Morkoç; Takamasa Kuroda; Atsushi Tackeuchi

doi:10.1109/TNANO.2004.834170

Size dependence of carrier recombination efficiency in GaN quantum dots

Arup Neogi^*, Henry Everitt, Hadis Morkoç, Takamasa Kuroda, Atsushi Tackeuchi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The dependence of radiative recombination rate and efficiency on GaN quantum-dot (QD) size and temperature is studied by time-resolved photoluminescence (PL) spectroscopy. The emission is dominated by radiative recombination at low temperatures (<125 K) and exhibits high PL efficiency at room temperature. The radiative lifetime and the relative quantum efficiency decrease with the decreasing QD size.

Original language	English
Pages (from-to)	297-299
Number of pages	3
Journal	IEEE Transactions on Nanotechnology
Volume	4
Issue number	2
DOIs	https://doi.org/10.1109/TNANO.2004.834170
Publication status	Published - 2005 Mar

Keywords

GaN
Molecular-beam epitaxy
Quantum dots (QDs)
Semiconductor nanostructures
Time-resolved photoluminescence (PL)

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2004.834170

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title = "Size dependence of carrier recombination efficiency in GaN quantum dots",

abstract = "The dependence of radiative recombination rate and efficiency on GaN quantum-dot (QD) size and temperature is studied by time-resolved photoluminescence (PL) spectroscopy. The emission is dominated by radiative recombination at low temperatures (<125 K) and exhibits high PL efficiency at room temperature. The radiative lifetime and the relative quantum efficiency decrease with the decreasing QD size.",

keywords = "GaN, Molecular-beam epitaxy, Quantum dots (QDs), Semiconductor nanostructures, Time-resolved photoluminescence (PL)",

author = "Arup Neogi and Henry Everitt and Hadis Morko{\c c} and Takamasa Kuroda and Atsushi Tackeuchi",

year = "2005",

month = mar,

doi = "10.1109/TNANO.2004.834170",

language = "English",

volume = "4",

pages = "297--299",

journal = "IEEE Transactions on Nanotechnology",

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T1 - Size dependence of carrier recombination efficiency in GaN quantum dots

AU - Neogi, Arup

AU - Everitt, Henry

AU - Morkoç, Hadis

AU - Kuroda, Takamasa

AU - Tackeuchi, Atsushi

PY - 2005/3

Y1 - 2005/3

N2 - The dependence of radiative recombination rate and efficiency on GaN quantum-dot (QD) size and temperature is studied by time-resolved photoluminescence (PL) spectroscopy. The emission is dominated by radiative recombination at low temperatures (<125 K) and exhibits high PL efficiency at room temperature. The radiative lifetime and the relative quantum efficiency decrease with the decreasing QD size.

AB - The dependence of radiative recombination rate and efficiency on GaN quantum-dot (QD) size and temperature is studied by time-resolved photoluminescence (PL) spectroscopy. The emission is dominated by radiative recombination at low temperatures (<125 K) and exhibits high PL efficiency at room temperature. The radiative lifetime and the relative quantum efficiency decrease with the decreasing QD size.

KW - GaN

KW - Molecular-beam epitaxy

KW - Quantum dots (QDs)

KW - Semiconductor nanostructures

KW - Time-resolved photoluminescence (PL)

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DO - 10.1109/TNANO.2004.834170

M3 - Article

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SN - 1536-125X

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SP - 297

EP - 299

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 2

ER -

Size dependence of carrier recombination efficiency in GaN quantum dots

Abstract

Keywords

ASJC Scopus subject areas

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