Smart power devices and ICs using GaAs and wide and extreme bandgap semiconductors

T. Paul Chow, Ichiro Omura, Masataka Higashiwaki, Hiroshi Kawarada, Vipindas Pala

Research output: Contribution to journalArticlepeer-review

97 Citations (Scopus)


We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga2O3, and diamond), relative to silicon, for power electronics applications. We examine their device structures and associated materials/process technologies and selectively review the recent experimental demonstrations of high voltage power devices and IC structures of these semiconductors. We discuss the technical obstacles that still need to be addressed and overcome before large-scale commercialization commences.

Original languageEnglish
Article number7851006
Pages (from-to)856-873
Number of pages18
JournalIEEE Transactions on Electron Devices
Issue number3
Publication statusPublished - 2017 Mar


  • Gallium arsenide
  • power integrated circuits
  • power semiconductor devices
  • wide bandgap semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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