TY - GEN
T1 - Sn-Bi added Ag-based transient liquid phase sintering for low temperature bonding
AU - Faiz, M. Khairi
AU - Yamamoto, Takehiro
AU - Yoshida, Makoto
N1 - Publisher Copyright:
© 2017 JSPS 191st Committee on Innovative Interface Bonding Technology.
PY - 2017/6/13
Y1 - 2017/6/13
N2 - A low temperature and low pressure fluxless bonding of plateless Cu-Cu substrates has been achieved by transient liquid phase sintering of Ag and Sn-Bi eutectic powder mixture in a formic acid reducing environment. The effects of Sn-Bi addition amount and sintering temperature to the shear strength and microstructure were investigated. Remelting temperature of the sintered paste was also examined. Shear strength of 30 weight percentage added Sn-Bi that was sintered at 250°C was over than 20 MPa. The microstructure varied with the Sn-Bi addition amount, however, mainly consisted of Ag solid solution and/or Ag-Sn intermetallic compounds (IMCs), Bi-rich phase and Cu-Sn IMCs. No remelting event at Sn-Bi eutectic temperature was observed and the remelting temperature shifted to approximately 262°C, implying the possibility for higher operation temperature although the processing was performed at lower temperature.
AB - A low temperature and low pressure fluxless bonding of plateless Cu-Cu substrates has been achieved by transient liquid phase sintering of Ag and Sn-Bi eutectic powder mixture in a formic acid reducing environment. The effects of Sn-Bi addition amount and sintering temperature to the shear strength and microstructure were investigated. Remelting temperature of the sintered paste was also examined. Shear strength of 30 weight percentage added Sn-Bi that was sintered at 250°C was over than 20 MPa. The microstructure varied with the Sn-Bi addition amount, however, mainly consisted of Ag solid solution and/or Ag-Sn intermetallic compounds (IMCs), Bi-rich phase and Cu-Sn IMCs. No remelting event at Sn-Bi eutectic temperature was observed and the remelting temperature shifted to approximately 262°C, implying the possibility for higher operation temperature although the processing was performed at lower temperature.
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U2 - 10.23919/LTB-3D.2017.7947430
DO - 10.23919/LTB-3D.2017.7947430
M3 - Conference contribution
AN - SCOPUS:85022177520
T3 - Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
SP - 34
BT - Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
Y2 - 16 May 2017 through 18 May 2017
ER -