Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1- x- y Six Sny epitaxial layers grown on GaAs(001)

Masashi Kurosawa; Masaya Nakata; Tianzhuo Zhan; Motohiro Tomita; Takanobu Watanabe; Osamu Nakatsuka

doi:10.35848/1347-4065/ac7bc7

Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge_{1- x- y}Si_xSn_yepitaxial layers grown on GaAs(001)

Masashi Kurosawa^*, Masaya Nakata, Tianzhuo Zhan, Motohiro Tomita, Takanobu Watanabe, Osamu Nakatsuka

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We investigate Sn incorporation effects on the thermoelectrical characteristics of n-type Ge-rich Ge1-x-y Si x Sn y layers (x ≈ 0.05-0.1, y ≈ 0.03) pseudomorphically grown on semi-insulating GaAs(001) substrates by molecular beam epitaxy. Despite the low Sn content of 3%, the Sn atoms play a role in suppressing the thermal conductivity from 13.5 to 9.0 Wm-1 K-1 without degradation of the electrical conductivity and the Seebeck coefficient. Furthermore, a relatively high power factor (maximum: 14 μW cm-1 K-2 at room temperature) was also achieved for the Ge1-x-y Si x Sn y layers, almost the same as the Si1-x Ge x ones (maximum: 12 μW cm-1 K-2 at room temperature) grown with the same conditions. This result opens up the possibility of developing Sn-incorporated group-IV thermoelectric devices.

Original language	English
Article number	085502
Journal	Japanese journal of applied physics
Volume	61
Issue number	8
DOIs	https://doi.org/10.35848/1347-4065/ac7bc7
Publication status	Published - 2022 Aug 1

Keywords

GeSiSn
MBE
group-IV alloy
thermoelectric property
thin film

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.35848/1347-4065/ac7bc7

Cite this

@article{9565b30551db4509addb9af2dbcbf3a1,

title = "Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1- x- y Six Sny epitaxial layers grown on GaAs(001)",

abstract = "We investigate Sn incorporation effects on the thermoelectrical characteristics of n-type Ge-rich Ge1-x-y Si x Sn y layers (x ≈ 0.05-0.1, y ≈ 0.03) pseudomorphically grown on semi-insulating GaAs(001) substrates by molecular beam epitaxy. Despite the low Sn content of 3%, the Sn atoms play a role in suppressing the thermal conductivity from 13.5 to 9.0 Wm-1 K-1 without degradation of the electrical conductivity and the Seebeck coefficient. Furthermore, a relatively high power factor (maximum: 14 μW cm-1 K-2 at room temperature) was also achieved for the Ge1-x-y Si x Sn y layers, almost the same as the Si1-x Ge x ones (maximum: 12 μW cm-1 K-2 at room temperature) grown with the same conditions. This result opens up the possibility of developing Sn-incorporated group-IV thermoelectric devices.",

keywords = "GeSiSn, MBE, group-IV alloy, thermoelectric property, thin film",

author = "Masashi Kurosawa and Masaya Nakata and Tianzhuo Zhan and Motohiro Tomita and Takanobu Watanabe and Osamu Nakatsuka",

note = "Funding Information: This work was partly supported by PRESTO (No. JPMJPR15R2) and CREST (No. JPMJCR19Q5) from the JST in Japan, JSPS KAKENHI (Nos. 19K21971, 19H00853, 20H05188, and 21H01366), a research grant (Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development) from the MEXT in Japan. Publisher Copyright: {\textcopyright} 2022 The Japan Society of Applied Physics.",

year = "2022",

month = aug,

day = "1",

doi = "10.35848/1347-4065/ac7bc7",

language = "English",

volume = "61",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "8",

}

TY - JOUR

T1 - Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge1- x- y Six Sny epitaxial layers grown on GaAs(001)

AU - Kurosawa, Masashi

AU - Nakata, Masaya

AU - Zhan, Tianzhuo

AU - Tomita, Motohiro

AU - Watanabe, Takanobu

AU - Nakatsuka, Osamu

N1 - Funding Information: This work was partly supported by PRESTO (No. JPMJPR15R2) and CREST (No. JPMJCR19Q5) from the JST in Japan, JSPS KAKENHI (Nos. 19K21971, 19H00853, 20H05188, and 21H01366), a research grant (Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development) from the MEXT in Japan. Publisher Copyright: © 2022 The Japan Society of Applied Physics.

PY - 2022/8/1

Y1 - 2022/8/1

N2 - We investigate Sn incorporation effects on the thermoelectrical characteristics of n-type Ge-rich Ge1-x-y Si x Sn y layers (x ≈ 0.05-0.1, y ≈ 0.03) pseudomorphically grown on semi-insulating GaAs(001) substrates by molecular beam epitaxy. Despite the low Sn content of 3%, the Sn atoms play a role in suppressing the thermal conductivity from 13.5 to 9.0 Wm-1 K-1 without degradation of the electrical conductivity and the Seebeck coefficient. Furthermore, a relatively high power factor (maximum: 14 μW cm-1 K-2 at room temperature) was also achieved for the Ge1-x-y Si x Sn y layers, almost the same as the Si1-x Ge x ones (maximum: 12 μW cm-1 K-2 at room temperature) grown with the same conditions. This result opens up the possibility of developing Sn-incorporated group-IV thermoelectric devices.

AB - We investigate Sn incorporation effects on the thermoelectrical characteristics of n-type Ge-rich Ge1-x-y Si x Sn y layers (x ≈ 0.05-0.1, y ≈ 0.03) pseudomorphically grown on semi-insulating GaAs(001) substrates by molecular beam epitaxy. Despite the low Sn content of 3%, the Sn atoms play a role in suppressing the thermal conductivity from 13.5 to 9.0 Wm-1 K-1 without degradation of the electrical conductivity and the Seebeck coefficient. Furthermore, a relatively high power factor (maximum: 14 μW cm-1 K-2 at room temperature) was also achieved for the Ge1-x-y Si x Sn y layers, almost the same as the Si1-x Ge x ones (maximum: 12 μW cm-1 K-2 at room temperature) grown with the same conditions. This result opens up the possibility of developing Sn-incorporated group-IV thermoelectric devices.

KW - GeSiSn

KW - MBE

KW - group-IV alloy

KW - thermoelectric property

KW - thin film

UR - http://www.scopus.com/inward/record.url?scp=85134894217&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85134894217&partnerID=8YFLogxK

U2 - 10.35848/1347-4065/ac7bc7

DO - 10.35848/1347-4065/ac7bc7

M3 - Article

AN - SCOPUS:85134894217

SN - 0021-4922

VL - 61

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 8

M1 - 085502

ER -