Abstract
Analytical and experimental studies are conducted on the soft errors of 64-Kbit dynamic RAMs. First, the relation between the device parameters and the critical charge is examined. If the charge distribution collected in the silicon substrate is Gaussian, the soft error rate is expressed as a complementary error function of the critical charge.
| Original language | English |
|---|---|
| Pages (from-to) | 87-93 |
| Number of pages | 7 |
| Journal | Electronics & communications in Japan |
| Volume | 64 |
| Issue number | 8 |
| Publication status | Published - 1981 Aug |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)