Solution-based fabrication of high-k dielectrics using oxide nanosheets

Minoru Osada; Kosho Akatsuka; Yasuo Ebina; Hiroshi Funakubo; Kazunori Takada; Takayoshi Sasaki

doi:10.1149/1.3206633

Solution-based fabrication of high-k dielectrics using oxide nanosheets

Minoru Osada^*, Kosho Akatsuka, Yasuo Ebina, Hiroshi Funakubo, Kazunori Takada, Takayoshi Sasaki

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report a novel procedure for fabricating high-k dielectric nanofilms by using titania nanosheet as a building block. Langmuir-Blodgett deposition using atomically flat SrRuO₃ or Pt substrates is advantageous as a means of fabricating atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of a well-ordered lamellar structure without an interfacial dead layer. These nanofilms exhibited both high dielectric constant (ε_r ∼125) and low leakage current density (J < 10^-7 A/cm ²) even for thicknesses as low as 10 nm. These results indicate that titania nanosheet is a very promising candidate as a high-k nanoblock, and its bottom-up fabrication provides new opportunities for the development of high-k devices.

Original language	English
Title of host publication	ECS Transactions
Pages	349-352
Number of pages	4
Volume	25
Edition	6
DOIs	https://doi.org/10.1149/1.3206633
Publication status	Published - 2009
Externally published	Yes
Event	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria Duration: 2009 Oct 5 → 2009 Oct 7

Other

Other	7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
Country/Territory	Austria
City	Vienna
Period	09/10/5 → 09/10/7

ASJC Scopus subject areas

Engineering(all)

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Osada, M, Akatsuka, K, Ebina, Y, Funakubo, H, Takada, K & Sasaki, T 2009, Solution-based fabrication of high-k dielectrics using oxide nanosheets. in ECS Transactions. 6 edn, vol. 25, pp. 349-352, 7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society, Vienna, Austria, 09/10/5. https://doi.org/10.1149/1.3206633

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abstract = "We report a novel procedure for fabricating high-k dielectric nanofilms by using titania nanosheet as a building block. Langmuir-Blodgett deposition using atomically flat SrRuO3 or Pt substrates is advantageous as a means of fabricating atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of a well-ordered lamellar structure without an interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thicknesses as low as 10 nm. These results indicate that titania nanosheet is a very promising candidate as a high-k nanoblock, and its bottom-up fabrication provides new opportunities for the development of high-k devices.",

author = "Minoru Osada and Kosho Akatsuka and Yasuo Ebina and Hiroshi Funakubo and Kazunori Takada and Takayoshi Sasaki",

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AU - Osada, Minoru

AU - Akatsuka, Kosho

AU - Ebina, Yasuo

AU - Funakubo, Hiroshi

AU - Takada, Kazunori

AU - Sasaki, Takayoshi

PY - 2009

Y1 - 2009

N2 - We report a novel procedure for fabricating high-k dielectric nanofilms by using titania nanosheet as a building block. Langmuir-Blodgett deposition using atomically flat SrRuO3 or Pt substrates is advantageous as a means of fabricating atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of a well-ordered lamellar structure without an interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thicknesses as low as 10 nm. These results indicate that titania nanosheet is a very promising candidate as a high-k nanoblock, and its bottom-up fabrication provides new opportunities for the development of high-k devices.

AB - We report a novel procedure for fabricating high-k dielectric nanofilms by using titania nanosheet as a building block. Langmuir-Blodgett deposition using atomically flat SrRuO3 or Pt substrates is advantageous as a means of fabricating atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of a well-ordered lamellar structure without an interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thicknesses as low as 10 nm. These results indicate that titania nanosheet is a very promising candidate as a high-k nanoblock, and its bottom-up fabrication provides new opportunities for the development of high-k devices.

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Y2 - 5 October 2009 through 7 October 2009

ER -

Solution-based fabrication of high-k dielectrics using oxide nanosheets

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