Solution growth behavior of SiC by a temperature difference method using Fe-Si solvent

Sakiko Kawanishi*, Takeshi Yoshikawa, Kazuki Morita, Nobuhiro Okada, Kazuhiko Kusunoki, Kazuhito Kamei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The solution growth behavior of silicon carbide (SiC) by a temperature difference method using Fe-Si solvent below 1773 K was investigated to clarify the dominant factor affecting growth kinetics. Solution growth experiments were conducted both under the suppression of buoyancy convection and under forced convection controlled by rotating the seed and supply source substrates. In addition, the fluid flow in the solution was estimated by numerical analysis. When buoyancy convection was suppressed, a ridge of SiC grew on the seed substrate only around the edge of the contact area with the solution, which was affected by Marangoni flow generated by the large temperature gradient. Under forced convection in the solution by substrates rotation, lateral growth of SiC was observed over the entire region of the contacting area. Growth rates of SiC of 60-160 μm/h were obtained for various temperature conditions and were increased proportionally by increasing the supersaturation of carbon at the growth interface. It was thus clarified that the mass transfer of carbon in the solution was the rate-determining step of the solution growth process of SiC.

Original languageEnglish
Pages (from-to)121-126
Number of pages6
JournalJournal of Crystal Growth
Publication statusPublished - 2013
Externally publishedYes


  • A1. Computer simulation
  • A1. Crystal morphology
  • A1. Fluid flows
  • A2. Growth from solution
  • A2. Traveling solvent zone growth
  • B2. Semiconducting silicon compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry


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