Solution growth of 3C-SiC single crystals by cold crucible technique

T. Tanaka; N. Yashiro; K. Kusunoki; K. Kamei; A. Yauchi

doi:10.4028/3-908453-11-9.191

Solution growth of 3C-SiC single crystals by cold crucible technique

T. Tanaka^*, N. Yashiro, K. Kusunoki, K. Kamei, A. Yauchi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have successfully grown 3C-SiC(111) single crystals 10mm × 10mm in dimension on 6H-SiC(0001) substrate by the solution growth method using cold crucible technique. The growth rate of 60μm/hr was achieved. The use of Si-Ti-C ternary solution as well as the electromagnetic stirring are responsible for the relatively high growth rate in solution method. The threading dislocation density is low and the etch pit density amounts to 10 ⁵-10⁶/cm² at the lowest region. Polytype of the grown layer has changed from 3C to 6H with an increase in the dip depth of substrate. A mathematical model was applied to get better understanding of what happened in the crucible.

Original language	English
Pages (from-to)	191-194
Number of pages	4
Journal	Materials Science Forum
Volume	600-603
DOIs	https://doi.org/10.4028/3-908453-11-9.191
Publication status	Published - 2009
Externally published	Yes

Keywords

3C-SiC
6H-SiC
Cold crucible
Numerical analysis
Solution growth

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanical Engineering
Mechanics of Materials

Access to Document

10.4028/3-908453-11-9.191

Cite this

@article{99ceabf467ec480a87be512be08ea673,

title = "Solution growth of 3C-SiC single crystals by cold crucible technique",

abstract = "We have successfully grown 3C-SiC(111) single crystals 10mm × 10mm in dimension on 6H-SiC(0001) substrate by the solution growth method using cold crucible technique. The growth rate of 60μm/hr was achieved. The use of Si-Ti-C ternary solution as well as the electromagnetic stirring are responsible for the relatively high growth rate in solution method. The threading dislocation density is low and the etch pit density amounts to 10 5-106/cm2 at the lowest region. Polytype of the grown layer has changed from 3C to 6H with an increase in the dip depth of substrate. A mathematical model was applied to get better understanding of what happened in the crucible.",

keywords = "3C-SiC, 6H-SiC, Cold crucible, Numerical analysis, Solution growth",

author = "T. Tanaka and N. Yashiro and K. Kusunoki and K. Kamei and A. Yauchi",

year = "2009",

doi = "10.4028/3-908453-11-9.191",

language = "English",

volume = "600-603",

pages = "191--194",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Solution growth of 3C-SiC single crystals by cold crucible technique

AU - Tanaka, T.

AU - Yashiro, N.

AU - Kusunoki, K.

AU - Kamei, K.

AU - Yauchi, A.

PY - 2009

Y1 - 2009

N2 - We have successfully grown 3C-SiC(111) single crystals 10mm × 10mm in dimension on 6H-SiC(0001) substrate by the solution growth method using cold crucible technique. The growth rate of 60μm/hr was achieved. The use of Si-Ti-C ternary solution as well as the electromagnetic stirring are responsible for the relatively high growth rate in solution method. The threading dislocation density is low and the etch pit density amounts to 10 5-106/cm2 at the lowest region. Polytype of the grown layer has changed from 3C to 6H with an increase in the dip depth of substrate. A mathematical model was applied to get better understanding of what happened in the crucible.

AB - We have successfully grown 3C-SiC(111) single crystals 10mm × 10mm in dimension on 6H-SiC(0001) substrate by the solution growth method using cold crucible technique. The growth rate of 60μm/hr was achieved. The use of Si-Ti-C ternary solution as well as the electromagnetic stirring are responsible for the relatively high growth rate in solution method. The threading dislocation density is low and the etch pit density amounts to 10 5-106/cm2 at the lowest region. Polytype of the grown layer has changed from 3C to 6H with an increase in the dip depth of substrate. A mathematical model was applied to get better understanding of what happened in the crucible.

KW - 3C-SiC

KW - 6H-SiC

KW - Cold crucible

KW - Numerical analysis

KW - Solution growth

UR - http://www.scopus.com/inward/record.url?scp=63849096927&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63849096927&partnerID=8YFLogxK

U2 - 10.4028/3-908453-11-9.191

DO - 10.4028/3-908453-11-9.191

M3 - Article

AN - SCOPUS:63849096927

SN - 0255-5476

VL - 600-603

SP - 191

EP - 194

JO - Materials Science Forum

JF - Materials Science Forum

ER -

Solution growth of 3C-SiC single crystals by cold crucible technique

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this