Solution-processed fabrication of single-walled carbon nanotube field effect transistors

M. Shiraishi*, T. Takenobu, Y. Iwasa, T. Iwai, H. Kataura, M. Ata

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We report the fabrication of thin film SWNT-FETs using a novel and simple solution process methodology. The SWNTs are dispersed in an organic solution in a narrow bundle structure and form nonaligned arrays which become the channels of FETs. The thin film FETs operate even at low temperature, and have the mobility that is about 100 times greater than those of other solution-processed organic thin film FETs. This simple fabrication process will help develop a novel route for the large-scale liquid phase production of commercially available flexible organic devices.

Original languageEnglish
Pages (from-to)485-489
Number of pages5
JournalFullerenes Nanotubes and Carbon Nanostructures
Issue numberSUPPL. 1
Publication statusPublished - 2005
Externally publishedYes


  • Field effect transistor
  • Molecular electronic device
  • Single-walled carbon nanotubes
  • Thin films

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • General Materials Science
  • Atomic and Molecular Physics, and Optics


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