Spatial distribution of defects in high-purity silica glasses

Ryoichi Tohmon*, Akihiro Ikeda, Yasushi Shimogaichi, Shuji Munekuni, Yoshimichi Ohki, Kaya Nagasawa, Yoshimasa Hama

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

The spatial distribution of defects and impurities in a variety of high-purity silica glass manufactured by different methods are studied. The defects investigated include those found in the as-manufactured glass (oxygen vacancy and peroxy linkage), as well as those induced by ionizing radiation or ultraviolet light (E' center and oxygen hole centers). A significant difference is observed in the distribution between silica manufactured by different methods. Furthermore, the defects induced by ionizing radiation or ultraviolet light have a spatial distribution relative to the geometry of the as-manufactured boule, suggesting that these defects arise primarily from the activation of preexisting precursors.

Original languageEnglish
Pages (from-to)1302-1306
Number of pages5
JournalJournal of Applied Physics
Volume67
Issue number3
DOIs
Publication statusPublished - 1990 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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