TY - JOUR
T1 - Spatial extent of wave functions of gate-induced hole carriers in pentacene field-effect devices as investigated by electron spin resonance
AU - Marumoto, Kazuhiro
AU - Kuroda, Shin Ichi
AU - Takenobu, Taishi
AU - Iwasa, Yoshihiro
PY - 2006
Y1 - 2006
N2 - An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S=1/2 spins. Anisotropic ESR signals due to unpaired π electrons show the molecular orientation at the interface in the devices. The spatial extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.
AB - An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S=1/2 spins. Anisotropic ESR signals due to unpaired π electrons show the molecular orientation at the interface in the devices. The spatial extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.
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U2 - 10.1103/PhysRevLett.97.256603
DO - 10.1103/PhysRevLett.97.256603
M3 - Article
AN - SCOPUS:33845794407
SN - 0031-9007
VL - 97
JO - Physical Review Letters
JF - Physical Review Letters
IS - 25
M1 - 256603
ER -