Spectral behaviour of aged 1.55 μm λ/4-shifted dfb lasers

S. Akiba; Y. Matsushima; M. Usami; K. Utaka

doi:10.1049/el:19870235

Spectral behaviour of aged 1.55 μm λ/4-shifted dfb lasers

S. Akiba, Y. Matsushima, M. Usami, K. Utaka

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Side-mode suppression ratio and main-mode wavelength were measured in the 3000 h life test of 1.55 μn λ/4-shifted InGaAsP/InP DFB lasers. Degradation of the single-wavelength property and the wavelength shift of the main mode were observed in lasers which showed relatively large degradation rates of about 10-4/h at 50°C. Indexing term: Semiconductor lasers.

Original language	English
Pages (from-to)	316-318
Number of pages	3
Journal	Electronics Letters
Volume	23
Issue number	7
DOIs	https://doi.org/10.1049/el:19870235
Publication status	Published - 1987 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19870235

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@article{e2066fce45ca4da58a9d07e3f2399277,

title = "Spectral behaviour of aged 1.55 μm λ/4-shifted dfb lasers",

abstract = "Side-mode suppression ratio and main-mode wavelength were measured in the 3000 h life test of 1.55 μn λ/4-shifted InGaAsP/InP DFB lasers. Degradation of the single-wavelength property and the wavelength shift of the main mode were observed in lasers which showed relatively large degradation rates of about 10-4/h at 50°C. Indexing term: Semiconductor lasers.",

author = "S. Akiba and Y. Matsushima and M. Usami and K. Utaka",

year = "1987",

month = jan,

day = "1",

doi = "10.1049/el:19870235",

language = "English",

volume = "23",

pages = "316--318",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "7",

}

TY - JOUR

T1 - Spectral behaviour of aged 1.55 μm λ/4-shifted dfb lasers

AU - Akiba, S.

AU - Matsushima, Y.

AU - Usami, M.

AU - Utaka, K.

PY - 1987/1/1

Y1 - 1987/1/1

N2 - Side-mode suppression ratio and main-mode wavelength were measured in the 3000 h life test of 1.55 μn λ/4-shifted InGaAsP/InP DFB lasers. Degradation of the single-wavelength property and the wavelength shift of the main mode were observed in lasers which showed relatively large degradation rates of about 10-4/h at 50°C. Indexing term: Semiconductor lasers.

AB - Side-mode suppression ratio and main-mode wavelength were measured in the 3000 h life test of 1.55 μn λ/4-shifted InGaAsP/InP DFB lasers. Degradation of the single-wavelength property and the wavelength shift of the main mode were observed in lasers which showed relatively large degradation rates of about 10-4/h at 50°C. Indexing term: Semiconductor lasers.

UR - http://www.scopus.com/inward/record.url?scp=0023314850&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023314850&partnerID=8YFLogxK

U2 - 10.1049/el:19870235

DO - 10.1049/el:19870235

M3 - Article

AN - SCOPUS:0023314850

SN - 0013-5194

VL - 23

SP - 316

EP - 318

JO - Electronics Letters

JF - Electronics Letters

IS - 7

ER -

Spectral behaviour of aged 1.55 μm λ/4-shifted dfb lasers

Abstract

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