Spectroscopic ellipsometry study on initial growth stages of GaN films on GaAs(0 0 1) in low-pressure MOVPE

Yoshitaka Taniyasu; Ryouichi Ito; Norio Shimoyama; Megumi Kurihara; Anwei Jia; Yoshinori Kato; Masakazu Kobayashi; Akihiko Yoshikawa; Kiyoshi Takahashi

doi:10.1016/S0022-0248(98)00271-1

Spectroscopic ellipsometry study on initial growth stages of GaN films on GaAs(0 0 1) in low-pressure MOVPE

Yoshitaka Taniyasu^*, Ryouichi Ito, Norio Shimoyama, Megumi Kurihara, Anwei Jia, Yoshinori Kato, Masakazu Kobayashi, Akihiko Yoshikawa, Kiyoshi Takahashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Initial growth stages of cubic GaN (c-GaN) films on GaAs(0 0 1) in low-pressure MOVPE were studied by spectroscopic ellipsometry. The GaN buffer layer was deposited at 500°C and was then annealed at 700°C with H₂/monomethylhydrazine (MMHy) ambient. Spectroscopic ellipsometry revealed that the buffer layer thickness was increased and the surface was roughened during the annealing process. The change of surface morphology was also confirmed by the atomic force microscopy measurement. These observations would be associated with the nitridation of the GaAs substrate by the ambient MMHy and re-crystallization of the GaN buffer layer. Spectroscopic ellipsometry is a helpful technique to study the initial growth stages of GaN films on GaAs substrates.

Original language	English
Pages (from-to)	305-309
Number of pages	5
Journal	Journal of Crystal Growth
Volume	189-190
DOIs	https://doi.org/10.1016/S0022-0248(98)00271-1
Publication status	Published - 1998 Jun 15
Externally published	Yes

Keywords

Cubic GaN
In-situ monitoring
MOVPE
Monomethylhydrazine
Spectroscopic ellipsometry

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(98)00271-1

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@article{74bd8876cc4c4b44b8a4595e4442a652,

title = "Spectroscopic ellipsometry study on initial growth stages of GaN films on GaAs(0 0 1) in low-pressure MOVPE",

abstract = "Initial growth stages of cubic GaN (c-GaN) films on GaAs(0 0 1) in low-pressure MOVPE were studied by spectroscopic ellipsometry. The GaN buffer layer was deposited at 500°C and was then annealed at 700°C with H2/monomethylhydrazine (MMHy) ambient. Spectroscopic ellipsometry revealed that the buffer layer thickness was increased and the surface was roughened during the annealing process. The change of surface morphology was also confirmed by the atomic force microscopy measurement. These observations would be associated with the nitridation of the GaAs substrate by the ambient MMHy and re-crystallization of the GaN buffer layer. Spectroscopic ellipsometry is a helpful technique to study the initial growth stages of GaN films on GaAs substrates.",

keywords = "Cubic GaN, In-situ monitoring, MOVPE, Monomethylhydrazine, Spectroscopic ellipsometry",

author = "Yoshitaka Taniyasu and Ryouichi Ito and Norio Shimoyama and Megumi Kurihara and Anwei Jia and Yoshinori Kato and Masakazu Kobayashi and Akihiko Yoshikawa and Kiyoshi Takahashi",

note = "Funding Information: This work was partly supported by the “Research for the Future” Program, Japan Society for the Promotion of Science (JSPS-RFTF 96R16201). ",

year = "1998",

month = jun,

day = "15",

doi = "10.1016/S0022-0248(98)00271-1",

language = "English",

volume = "189-190",

pages = "305--309",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Spectroscopic ellipsometry study on initial growth stages of GaN films on GaAs(0 0 1) in low-pressure MOVPE

AU - Taniyasu, Yoshitaka

AU - Ito, Ryouichi

AU - Shimoyama, Norio

AU - Kurihara, Megumi

AU - Jia, Anwei

AU - Kato, Yoshinori

AU - Kobayashi, Masakazu

AU - Yoshikawa, Akihiko

AU - Takahashi, Kiyoshi

N1 - Funding Information: This work was partly supported by the “Research for the Future” Program, Japan Society for the Promotion of Science (JSPS-RFTF 96R16201).

PY - 1998/6/15

Y1 - 1998/6/15

N2 - Initial growth stages of cubic GaN (c-GaN) films on GaAs(0 0 1) in low-pressure MOVPE were studied by spectroscopic ellipsometry. The GaN buffer layer was deposited at 500°C and was then annealed at 700°C with H2/monomethylhydrazine (MMHy) ambient. Spectroscopic ellipsometry revealed that the buffer layer thickness was increased and the surface was roughened during the annealing process. The change of surface morphology was also confirmed by the atomic force microscopy measurement. These observations would be associated with the nitridation of the GaAs substrate by the ambient MMHy and re-crystallization of the GaN buffer layer. Spectroscopic ellipsometry is a helpful technique to study the initial growth stages of GaN films on GaAs substrates.

AB - Initial growth stages of cubic GaN (c-GaN) films on GaAs(0 0 1) in low-pressure MOVPE were studied by spectroscopic ellipsometry. The GaN buffer layer was deposited at 500°C and was then annealed at 700°C with H2/monomethylhydrazine (MMHy) ambient. Spectroscopic ellipsometry revealed that the buffer layer thickness was increased and the surface was roughened during the annealing process. The change of surface morphology was also confirmed by the atomic force microscopy measurement. These observations would be associated with the nitridation of the GaAs substrate by the ambient MMHy and re-crystallization of the GaN buffer layer. Spectroscopic ellipsometry is a helpful technique to study the initial growth stages of GaN films on GaAs substrates.

KW - Cubic GaN

KW - In-situ monitoring

KW - MOVPE

KW - Monomethylhydrazine

KW - Spectroscopic ellipsometry

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U2 - 10.1016/S0022-0248(98)00271-1

DO - 10.1016/S0022-0248(98)00271-1

M3 - Article

AN - SCOPUS:0032094123

SN - 0022-0248

VL - 189-190

SP - 305

EP - 309

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Spectroscopic ellipsometry study on initial growth stages of GaN films on GaAs(0 0 1) in low-pressure MOVPE

Abstract

Keywords

ASJC Scopus subject areas

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