Spin injection from Fe3Si into GaAs

A. Kawaharazuka; M. Ramsteiner; J. Herfort; H. P. Schönherr; H. Kostial; K. H. Ploog

doi:10.1063/1.1807014

Spin injection from Fe₃Si into GaAs

A. Kawaharazuka^*, M. Ramsteiner, J. Herfort, H. P. Schönherr, H. Kostial, K. H. Ploog

^*Corresponding author for this work

Waseda Research Institute for Science and Engineering

Research output: Contribution to journal › Article › peer-review

95 Citations (Scopus)

Abstract

We demonstrate room-temperature spin injection from the epitaxially grown ferromagnetic metal Fe₃Si into the semiconductor GaAs. The injection efficiency is comparable to values previously obtained for the Fe/GaAs and MnAs/GaAs hybrid systems using the emission of similar (In,Ga)As/GaAs light-emitting diodes for the detection of spin polarization. The temperature dependence of the detected polarization is explained by taking into account spin relaxation inside the semiconductor device.

Original language	English
Pages (from-to)	3492-3494
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	16
DOIs	https://doi.org/10.1063/1.1807014
Publication status	Published - 2004 Oct 18

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1807014

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abstract = "We demonstrate room-temperature spin injection from the epitaxially grown ferromagnetic metal Fe3Si into the semiconductor GaAs. The injection efficiency is comparable to values previously obtained for the Fe/GaAs and MnAs/GaAs hybrid systems using the emission of similar (In,Ga)As/GaAs light-emitting diodes for the detection of spin polarization. The temperature dependence of the detected polarization is explained by taking into account spin relaxation inside the semiconductor device.",

author = "A. Kawaharazuka and M. Ramsteiner and J. Herfort and Sch{\"o}nherr, {H. P.} and H. Kostial and Ploog, {K. H.}",

year = "2004",

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T1 - Spin injection from Fe3Si into GaAs

AU - Kawaharazuka, A.

AU - Ramsteiner, M.

AU - Herfort, J.

AU - Schönherr, H. P.

AU - Kostial, H.

AU - Ploog, K. H.

PY - 2004/10/18

Y1 - 2004/10/18

N2 - We demonstrate room-temperature spin injection from the epitaxially grown ferromagnetic metal Fe3Si into the semiconductor GaAs. The injection efficiency is comparable to values previously obtained for the Fe/GaAs and MnAs/GaAs hybrid systems using the emission of similar (In,Ga)As/GaAs light-emitting diodes for the detection of spin polarization. The temperature dependence of the detected polarization is explained by taking into account spin relaxation inside the semiconductor device.

AB - We demonstrate room-temperature spin injection from the epitaxially grown ferromagnetic metal Fe3Si into the semiconductor GaAs. The injection efficiency is comparable to values previously obtained for the Fe/GaAs and MnAs/GaAs hybrid systems using the emission of similar (In,Ga)As/GaAs light-emitting diodes for the detection of spin polarization. The temperature dependence of the detected polarization is explained by taking into account spin relaxation inside the semiconductor device.

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U2 - 10.1063/1.1807014

DO - 10.1063/1.1807014

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Spin injection from Fe₃Si into GaAs

Abstract

ASJC Scopus subject areas

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