Spin polarization measurements of Co2Mn (Ga0.5Sn 0.5) thin films

B. S.D.Ch S. Varaprasad*, A. Rajanikanth, Y. K. Takahashi, K. Hono

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Co2MnGa0.5Sn0.5 (CMGS) thin films were epitaxially grown on MgO (0 0 1) substrates by magnetron sputtering and the current spin polarizations of the films with different post annealing conditions were measured by the point contact Andreev reflection method. The film deposited at a substrate temperature of 150 °C had a B2 structure and its spin polarization was estimated to be 59%. The film was ordered to the L2 1 structure by annealing at 600 °C, and the spin polarization was enhanced to 66%. The spin polarization and the intensity of the L21 diffraction showed clear correlation, suggesting L21 ordering is essential to achieve higher spin polarization of this quaternary Heusler alloy.

Original languageEnglish
Pages (from-to)3092-3097
Number of pages6
JournalJournal of Magnetism and Magnetic Materials
Issue number23
Publication statusPublished - 2011 Dec
Externally publishedYes


  • Heusler alloy
  • High spin polarization
  • Point contact Andreev reflection

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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