Spin polarization of Co 2FeSi full-heusler alloy and tunneling magnetoresistance of its magnetic tunneling junctions

Z. Gercsi; A. Rajanikanth; Y. K. Takahashi; K. Hono; M. Kikuchi; N. Tezuka; K. Inomata

doi:10.1063/1.2338025

Spin polarization of Co ₂FeSi full-heusler alloy and tunneling magnetoresistance of its magnetic tunneling junctions

Z. Gercsi^*, A. Rajanikanth, Y. K. Takahashi, K. Hono, M. Kikuchi, N. Tezuka, K. Inomata

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

76 Citations (Scopus)

Abstract

The authors report spin polarization (P) and tunneling magnetoresistance (TMR) of epitaxially grown Co ₂FeSi thin films on a MgO (001) substrate. A Heusler-type L2 ₁ structure was observed in the samples sputter deposited at 473 K or above. The P value of the ordered film was measured as 0.49±0.02 by the point contact Andreev reflection (PCAR) technique. The TMR values obtained from the magnetic tunneling junction (MTJ) using the Co ₂FeSi electrode and Al-oxide barrier were 67.5% at 5 K and 43.6% at 298 K, respectively. The P value estimated from the TMR using Julliere's model matches the spin polarization measured by the PCAR very well, indicating that the TMR value from the MTJ is governed by the intrinsic value of P of the electrode material for incoherent tunneling.

Original language	English
Article number	082512
Journal	Applied Physics Letters
Volume	89
Issue number	8
DOIs	https://doi.org/10.1063/1.2338025
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{0383ba4238364358be2001c54f77ad4e,

title = "Spin polarization of Co 2FeSi full-heusler alloy and tunneling magnetoresistance of its magnetic tunneling junctions",

abstract = "The authors report spin polarization (P) and tunneling magnetoresistance (TMR) of epitaxially grown Co 2FeSi thin films on a MgO (001) substrate. A Heusler-type L2 1 structure was observed in the samples sputter deposited at 473 K or above. The P value of the ordered film was measured as 0.49±0.02 by the point contact Andreev reflection (PCAR) technique. The TMR values obtained from the magnetic tunneling junction (MTJ) using the Co 2FeSi electrode and Al-oxide barrier were 67.5% at 5 K and 43.6% at 298 K, respectively. The P value estimated from the TMR using Julliere's model matches the spin polarization measured by the PCAR very well, indicating that the TMR value from the MTJ is governed by the intrinsic value of P of the electrode material for incoherent tunneling.",

author = "Z. Gercsi and A. Rajanikanth and Takahashi, {Y. K.} and K. Hono and M. Kikuchi and N. Tezuka and K. Inomata",

note = "Funding Information: One of the authors (Z.G.) acknowledges JSPS for the provision of a JSPS fellowship and another author (A.R.) thanks NIMS for the provision of a NIMS Junior Research Assistantship. This work was in part supported by the Ministry of Education, Science, Sports and Culture of Japan, Grant-in-Aid for Scientific Research (B), 17360346, 2005 and by the IT-Program RR2002 and Industrial Technology Research Grant in from NEDO.",

year = "2006",

doi = "10.1063/1.2338025",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "8",

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TY - JOUR

T1 - Spin polarization of Co 2FeSi full-heusler alloy and tunneling magnetoresistance of its magnetic tunneling junctions

AU - Gercsi, Z.

AU - Rajanikanth, A.

AU - Takahashi, Y. K.

AU - Hono, K.

AU - Kikuchi, M.

AU - Tezuka, N.

AU - Inomata, K.

N1 - Funding Information: One of the authors (Z.G.) acknowledges JSPS for the provision of a JSPS fellowship and another author (A.R.) thanks NIMS for the provision of a NIMS Junior Research Assistantship. This work was in part supported by the Ministry of Education, Science, Sports and Culture of Japan, Grant-in-Aid for Scientific Research (B), 17360346, 2005 and by the IT-Program RR2002 and Industrial Technology Research Grant in from NEDO.

PY - 2006

Y1 - 2006

N2 - The authors report spin polarization (P) and tunneling magnetoresistance (TMR) of epitaxially grown Co 2FeSi thin films on a MgO (001) substrate. A Heusler-type L2 1 structure was observed in the samples sputter deposited at 473 K or above. The P value of the ordered film was measured as 0.49±0.02 by the point contact Andreev reflection (PCAR) technique. The TMR values obtained from the magnetic tunneling junction (MTJ) using the Co 2FeSi electrode and Al-oxide barrier were 67.5% at 5 K and 43.6% at 298 K, respectively. The P value estimated from the TMR using Julliere's model matches the spin polarization measured by the PCAR very well, indicating that the TMR value from the MTJ is governed by the intrinsic value of P of the electrode material for incoherent tunneling.

AB - The authors report spin polarization (P) and tunneling magnetoresistance (TMR) of epitaxially grown Co 2FeSi thin films on a MgO (001) substrate. A Heusler-type L2 1 structure was observed in the samples sputter deposited at 473 K or above. The P value of the ordered film was measured as 0.49±0.02 by the point contact Andreev reflection (PCAR) technique. The TMR values obtained from the magnetic tunneling junction (MTJ) using the Co 2FeSi electrode and Al-oxide barrier were 67.5% at 5 K and 43.6% at 298 K, respectively. The P value estimated from the TMR using Julliere's model matches the spin polarization measured by the PCAR very well, indicating that the TMR value from the MTJ is governed by the intrinsic value of P of the electrode material for incoherent tunneling.

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DO - 10.1063/1.2338025

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JF - Applied Physics Letters

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Spin polarization of Co ₂FeSi full-heusler alloy and tunneling magnetoresistance of its magnetic tunneling junctions

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