Spin polarization of Co2 MnGe and Co2 MnSi thin films with A2 and L 21 structures

A. Rajanikanth*, Y. K. Takahashi, K. Hono

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


Spin polarizations (P) of polycrystalline Co2 MnGe and Co2 MnSi films that were sputter deposited on thermally oxidized Si substrates at various substrate temperatures (Ts) were measured by the point contact Andreev reflection technique. While continuous films were grown at Ts =500 °C with the L 21 structure, Mn-deficit islands were formed at Ts >700 °C. P showed strong dependence on the state of order of the alloys; P=0.58 for L 21 ordered Co2 MnGe, P=0.35 for A2 Co2 MnGe, P=0.54 for L 21 ordered Co2 MnSi, and P=0.52 for A2 Co2 MnSi. The experimentally determined P values of the L 21 ordered films are lower than the theoretical predictions, which is attributed to the imperfect L 21 ordering.

Original languageEnglish
Article number023901
JournalJournal of Applied Physics
Issue number2
Publication statusPublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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