Spin-polarization of excitons in GaN

Takamasa Kuroda; Atsushi Tackeuchi; Kazuyoshi Taniguchi; Takako Chinone; Naochika Horio

Spin-polarization of excitons in GaN

Takamasa Kuroda^*, Atsushi Tackeuchi, Kazuyoshi Taniguchi, Takako Chinone, Naochika Horio

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Exciton spin relaxation in bulk GaN was directly observed with sufficient time resolution for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τ_S, is found to be proportional to T ^1.4, where T is the temperature.

Original language	English
Pages	320-325
Number of pages	6
Publication status	Published - 2004 Dec 1
Event	State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States Duration: 2004 Oct 3 → 2004 Oct 8

Conference

Conference	State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia
Country/Territory	United States
City	Honolulu, HI
Period	04/10/3 → 04/10/8

ASJC Scopus subject areas

Engineering(all)

Cite this

Spin-polarization of excitons in GaN. / Kuroda, Takamasa; Tackeuchi, Atsushi; Taniguchi, Kazuyoshi et al.
2004. 320-325 Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States.

Research output: Contribution to conference › Paper › peer-review

Kuroda, T, Tackeuchi, A, Taniguchi, K, Chinone, T & Horio, N 2004, 'Spin-polarization of excitons in GaN', Paper presented at State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia, Honolulu, HI, United States, 04/10/3 - 04/10/8 pp. 320-325.

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abstract = "Exciton spin relaxation in bulk GaN was directly observed with sufficient time resolution for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τS, is found to be proportional to T 1.4, where T is the temperature.",

author = "Takamasa Kuroda and Atsushi Tackeuchi and Kazuyoshi Taniguchi and Takako Chinone and Naochika Horio",

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AU - Kuroda, Takamasa

AU - Tackeuchi, Atsushi

AU - Taniguchi, Kazuyoshi

AU - Chinone, Takako

AU - Horio, Naochika

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Exciton spin relaxation in bulk GaN was directly observed with sufficient time resolution for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τS, is found to be proportional to T 1.4, where T is the temperature.

AB - Exciton spin relaxation in bulk GaN was directly observed with sufficient time resolution for the first time, to our knowledge, by spin dependent pump and probe reflectance measurement with sub-picosecond's time resolution. The spin relaxation times at 150-225 K are 0.47-0.25 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time, τS, is found to be proportional to T 1.4, where T is the temperature.

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T2 - State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia

Y2 - 3 October 2004 through 8 October 2004

ER -

Spin-polarization of excitons in GaN

Abstract

Conference

ASJC Scopus subject areas

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