Spin-polarized electron injection through an Fe/InAs junction

Hiroshi Ohno, Kanji Yoh*, Kazuhisa Sueoka, Koichi Mukasa, Atsushi Kawaharazuka, Manfred E. Ramsteiner

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(lOO) in an external magnetic field is measured to investigate the spin injection efficiency. The obtained polarization of the electroluminescence is seen to increase up to about -12% at the temperature of 6.5 K and the external magnetic field of 10T. This result suggests that the efficient spin injection is possible through the ferromagnetic metal/semiconductor (FM/SC) interface without a tunneling barrier despite the contradictory arguments based on conductivity mismatch at the FM/SC interface.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number2 A
Publication statusPublished - 2003 Feb 1


  • Epitaxial growth
  • Fe/InAs junction
  • Indium arsenide
  • Spin injection
  • Spintronics
  • Zeeman splitting

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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