Spintronics Materials with High-Spin Polarization

Y. K. Takahashi*, K. Hono

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapter


This chapter reviews the exploration of quaternary ferromagnetic (FM) Heusler alloys with high-spin polarization and their applications to magnetoresistive devices. Of the most successful spintronics devices are tunneling magnetoresistance (TMR) devices for read sensor applications in hard disk drives (HDDs). Due to the invention of giant magnetoresistance (GMR) in ferromagnetic/nonmagnetic multilayers by Baibich and Grünberg and the subsequent invention of spin valves, the areal density of HDDs has increased dramatically due to improvements to the sensitivity of GMR sensors. The spin polarization of materials has to be promptly measured to explore highly spin polarized materials. TMR devices are the most successful spintronics device applications that have thus far been industrially implemented. The chapter highlights that some of the newly developed quaternary Heusler alloys were found to be promising FM materials in spintronics devices such as current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) and lateral spin valve (LSV).

Original languageEnglish
Title of host publicationSpintronics for Next Generation Innovative Devices
Number of pages22
ISBN (Electronic)9781118751886
ISBN (Print)9781118751886
Publication statusPublished - 2016 Jan 8
Externally publishedYes


  • Giant magnetoresistance
  • Hard disk drives
  • Heusler alloys
  • High-spin polarization
  • Lateral spin valve
  • Spintronics materials
  • Tunneling magnetoresistance devices

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)


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