Standard Gibbs energies of formation of SiCl2(g) and SiCl3(g) species at 1000 to 1300 K

Masaki Kanamori*, Masahito Sugiura, Akio Fuwa

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)

    Abstract

    The equilibria in the Si(s)-Cl2(g) system have been studied at temperature from 1000 to 1300 K using a transpiration reactor. The equilibria are considered among Si(s)-Cl2(g)-SiCl2(g)-SiCl3(g)-SiCl4(g). The standard Gibbs energies of formation for the species of SiCl2(g) and SiCl3(g) species at these temperatures are determined simultaneously, where these subchloride species coexist in appreciable quantities with SiCl4 in the gas phase at these temperatures, as follows: SiCl2(g): ΔG°f·SiCl(2)·T(1000-1300 K)=-185.0-2.32×10-2 T kJ·mol-1 SiCl3(g): ΔG°f·SiCl(3)·T(1000-1300 K)=-401.1+3.28×10-2 T kJ·mol-1

    Original languageEnglish
    Pages (from-to)156-163
    Number of pages8
    JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
    Volume59
    Issue number2
    Publication statusPublished - 1995 Feb

    ASJC Scopus subject areas

    • Metals and Alloys

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