Statistical analysis of dynamic-random-access-memory data-retention characteristics

Atsushi Hiraiwa*, Makoto Ogasawara, Nobuyoshi Natsuaki, Yutaka Itoh, Hidetoshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Charges stored in a memory cell of a dynamic random access memory are lost by the Shockley-Read-Hall (SRH) current that is generated at carrier traps in the space-charge-region (SCR) of a junction. Magnitude of the SRH current is determined by the trap levels that are distributed not only among cells, but also within a cell. This traplevel distribution causes the temperature-dependent variation in the data retention times. The SRH current is enhanced by an SCR field, and the distribution of the field among cells also increases the variation in the retention times. Variation in the number of traps, on the other hand, contributes only slightly to the retention-time distribution. From these results we find that reduction of the electric-field distribution, as well as of the average field, is important to improve the data-retention characteristics.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Number of pages8
Publication statusPublished - 1997
Externally publishedYes
EventMicroelectronic Device Technology - Austin, TX, United States
Duration: 1997 Oct 11997 Oct 1


OtherMicroelectronic Device Technology
Country/TerritoryUnited States
CityAustin, TX


  • Carrier trap
  • DRAM
  • Electric field
  • Monte carlo
  • Retention time
  • SRH
  • Trap assisted tunneling

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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