Statistical analysis of dynamic-random-access-memory data-retention characteristics

Atsushi Hiraiwa; Makoto Ogasawara; Nobuyoshi Natsuaki; Yutaka Itoh; Hidetoshi Iwai

doi:10.1117/12.284578

Statistical analysis of dynamic-random-access-memory data-retention characteristics

Atsushi Hiraiwa^*, Makoto Ogasawara, Nobuyoshi Natsuaki, Yutaka Itoh, Hidetoshi Iwai

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Charges stored in a memory cell of a dynamic random access memory are lost by the Shockley-Read-Hall (SRH) current that is generated at carrier traps in the space-charge-region (SCR) of a junction. Magnitude of the SRH current is determined by the trap levels that are distributed not only among cells, but also within a cell. This traplevel distribution causes the temperature-dependent variation in the data retention times. The SRH current is enhanced by an SCR field, and the distribution of the field among cells also increases the variation in the retention times. Variation in the number of traps, on the other hand, contributes only slightly to the retention-time distribution. From these results we find that reduction of the electric-field distribution, as well as of the average field, is important to improve the data-retention characteristics.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Pages	2-9
Number of pages	8
Volume	3212
DOIs	https://doi.org/10.1117/12.284578
Publication status	Published - 1997
Externally published	Yes
Event	Microelectronic Device Technology - Austin, TX, United States Duration: 1997 Oct 1 → 1997 Oct 1

Other

Other	Microelectronic Device Technology
Country/Territory	United States
City	Austin, TX
Period	97/10/1 → 97/10/1

Keywords

Carrier trap
DRAM
Electric field
Monte carlo
Retention time
SRH
Trap assisted tunneling

ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1117/12.284578

Cite this

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title = "Statistical analysis of dynamic-random-access-memory data-retention characteristics",

abstract = "Charges stored in a memory cell of a dynamic random access memory are lost by the Shockley-Read-Hall (SRH) current that is generated at carrier traps in the space-charge-region (SCR) of a junction. Magnitude of the SRH current is determined by the trap levels that are distributed not only among cells, but also within a cell. This traplevel distribution causes the temperature-dependent variation in the data retention times. The SRH current is enhanced by an SCR field, and the distribution of the field among cells also increases the variation in the retention times. Variation in the number of traps, on the other hand, contributes only slightly to the retention-time distribution. From these results we find that reduction of the electric-field distribution, as well as of the average field, is important to improve the data-retention characteristics.",

keywords = "Carrier trap, DRAM, Electric field, Monte carlo, Retention time, SRH, Trap assisted tunneling",

author = "Atsushi Hiraiwa and Makoto Ogasawara and Nobuyoshi Natsuaki and Yutaka Itoh and Hidetoshi Iwai",

year = "1997",

doi = "10.1117/12.284578",

language = "English",

volume = "3212",

pages = "2--9",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Microelectronic Device Technology ; Conference date: 01-10-1997 Through 01-10-1997",

}

TY - GEN

T1 - Statistical analysis of dynamic-random-access-memory data-retention characteristics

AU - Hiraiwa, Atsushi

AU - Ogasawara, Makoto

AU - Natsuaki, Nobuyoshi

AU - Itoh, Yutaka

AU - Iwai, Hidetoshi

PY - 1997

Y1 - 1997

N2 - Charges stored in a memory cell of a dynamic random access memory are lost by the Shockley-Read-Hall (SRH) current that is generated at carrier traps in the space-charge-region (SCR) of a junction. Magnitude of the SRH current is determined by the trap levels that are distributed not only among cells, but also within a cell. This traplevel distribution causes the temperature-dependent variation in the data retention times. The SRH current is enhanced by an SCR field, and the distribution of the field among cells also increases the variation in the retention times. Variation in the number of traps, on the other hand, contributes only slightly to the retention-time distribution. From these results we find that reduction of the electric-field distribution, as well as of the average field, is important to improve the data-retention characteristics.

AB - Charges stored in a memory cell of a dynamic random access memory are lost by the Shockley-Read-Hall (SRH) current that is generated at carrier traps in the space-charge-region (SCR) of a junction. Magnitude of the SRH current is determined by the trap levels that are distributed not only among cells, but also within a cell. This traplevel distribution causes the temperature-dependent variation in the data retention times. The SRH current is enhanced by an SCR field, and the distribution of the field among cells also increases the variation in the retention times. Variation in the number of traps, on the other hand, contributes only slightly to the retention-time distribution. From these results we find that reduction of the electric-field distribution, as well as of the average field, is important to improve the data-retention characteristics.

KW - Carrier trap

KW - DRAM

KW - Electric field

KW - Monte carlo

KW - Retention time

KW - SRH

KW - Trap assisted tunneling

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DO - 10.1117/12.284578

M3 - Conference contribution

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VL - 3212

SP - 2

EP - 9

BT - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Microelectronic Device Technology

Y2 - 1 October 1997 through 1 October 1997

ER -

Statistical analysis of dynamic-random-access-memory data-retention characteristics

Abstract

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Keywords

ASJC Scopus subject areas

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