STM/STS study of electronic states in highly underdoped Bi2212

T. Kasai; S. Yamashita; H. Nakajima; T. Fujii; I. Terasaki; T. Watanabe; H. Shibata; A. Matsuda

doi:10.1016/j.physc.2009.11.148

STM/STS study of electronic states in highly underdoped Bi2212

T. Kasai, S. Yamashita^*, H. Nakajima, T. Fujii, I. Terasaki, T. Watanabe, H. Shibata, A. Matsuda

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Local density of states (LDOS) and the lattice structure of highly underdoped Bi₂Sr₂CaCu₂O₈₊ _δ with T_c = 22 K and 30 K were investigated by a low temperature scanning tunneling microscope. The modulation structure of the Bi-O surface was strongly depressed in the highly underdoped samples. The depression was observed only in the samples subject to the strong reduction annealing process, suggesting that the strong reduction in excess oxygen could destroy the modulation structure. At a time, patch-like inhomogeneity in the gap map sometimes disappeared, indicating that the existence of excess oxygen has an important role in the patch formation. Analysis on the LDOS with various doping levels showed that there was no crossover energy, which separates a pseudogap and a superconducting gap and is proportional to T_c.

Original language	English
Pages (from-to)	S173-S175
Journal	Physica C: Superconductivity and its applications
Volume	470
Issue number	SUPPL.1
DOIs	https://doi.org/10.1016/j.physc.2009.11.148
Publication status	Published - 2010 Dec 1

Keywords

Bi2212
STM
Underdoped

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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10.1016/j.physc.2009.11.148

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title = "STM/STS study of electronic states in highly underdoped Bi2212",

abstract = "Local density of states (LDOS) and the lattice structure of highly underdoped Bi2Sr2CaCu2O8+ δ with Tc = 22 K and 30 K were investigated by a low temperature scanning tunneling microscope. The modulation structure of the Bi-O surface was strongly depressed in the highly underdoped samples. The depression was observed only in the samples subject to the strong reduction annealing process, suggesting that the strong reduction in excess oxygen could destroy the modulation structure. At a time, patch-like inhomogeneity in the gap map sometimes disappeared, indicating that the existence of excess oxygen has an important role in the patch formation. Analysis on the LDOS with various doping levels showed that there was no crossover energy, which separates a pseudogap and a superconducting gap and is proportional to Tc.",

keywords = "Bi2212, STM, Underdoped",

author = "T. Kasai and S. Yamashita and H. Nakajima and T. Fujii and I. Terasaki and T. Watanabe and H. Shibata and A. Matsuda",

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T1 - STM/STS study of electronic states in highly underdoped Bi2212

AU - Kasai, T.

AU - Yamashita, S.

AU - Nakajima, H.

AU - Fujii, T.

AU - Terasaki, I.

AU - Watanabe, T.

AU - Shibata, H.

AU - Matsuda, A.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Local density of states (LDOS) and the lattice structure of highly underdoped Bi2Sr2CaCu2O8+ δ with Tc = 22 K and 30 K were investigated by a low temperature scanning tunneling microscope. The modulation structure of the Bi-O surface was strongly depressed in the highly underdoped samples. The depression was observed only in the samples subject to the strong reduction annealing process, suggesting that the strong reduction in excess oxygen could destroy the modulation structure. At a time, patch-like inhomogeneity in the gap map sometimes disappeared, indicating that the existence of excess oxygen has an important role in the patch formation. Analysis on the LDOS with various doping levels showed that there was no crossover energy, which separates a pseudogap and a superconducting gap and is proportional to Tc.

AB - Local density of states (LDOS) and the lattice structure of highly underdoped Bi2Sr2CaCu2O8+ δ with Tc = 22 K and 30 K were investigated by a low temperature scanning tunneling microscope. The modulation structure of the Bi-O surface was strongly depressed in the highly underdoped samples. The depression was observed only in the samples subject to the strong reduction annealing process, suggesting that the strong reduction in excess oxygen could destroy the modulation structure. At a time, patch-like inhomogeneity in the gap map sometimes disappeared, indicating that the existence of excess oxygen has an important role in the patch formation. Analysis on the LDOS with various doping levels showed that there was no crossover energy, which separates a pseudogap and a superconducting gap and is proportional to Tc.

KW - Bi2212

KW - STM

KW - Underdoped

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IS - SUPPL.1

ER -

STM/STS study of electronic states in highly underdoped Bi2212

Abstract

Keywords

ASJC Scopus subject areas

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