Strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors

M. Wada; S. Araki; T. Kudou; T. Umezawa; S. Nakajima; T. Ueda

doi:10.1049/el:20021160

Strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors

M. Wada^*, S. Araki, T. Kudou, T. Umezawa, S. Nakajima, T. Ueda

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The strain-balanced InAsP/InP/InGaAs multiple quantum well (MQW) structures for mid-wavelength-infrared photodetectors are presented. The MQW consists of 42% strained InAsP wells, InP barriers and 2% strained InGaAs layers, where the strained InP/InAsP/InP quantum wells provide a light-absorbing layer and the strain is entirely compensated by introducing thin strained InGaAs layers.

Original language	English
Pages (from-to)	1744-1745
Number of pages	2
Journal	Electronics Letters
Volume	38
Issue number	25
DOIs	https://doi.org/10.1049/el:20021160
Publication status	Published - 2002 Dec 5
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20021160

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@article{b07a92e8506443e19c124eec08274d5e,

title = "Strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors",

abstract = "The strain-balanced InAsP/InP/InGaAs multiple quantum well (MQW) structures for mid-wavelength-infrared photodetectors are presented. The MQW consists of 42% strained InAsP wells, InP barriers and 2% strained InGaAs layers, where the strained InP/InAsP/InP quantum wells provide a light-absorbing layer and the strain is entirely compensated by introducing thin strained InGaAs layers.",

author = "M. Wada and S. Araki and T. Kudou and T. Umezawa and S. Nakajima and T. Ueda",

year = "2002",

month = dec,

day = "5",

doi = "10.1049/el:20021160",

language = "English",

volume = "38",

pages = "1744--1745",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "25",

}

TY - JOUR

T1 - Strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors

AU - Wada, M.

AU - Araki, S.

AU - Kudou, T.

AU - Umezawa, T.

AU - Nakajima, S.

AU - Ueda, T.

PY - 2002/12/5

Y1 - 2002/12/5

N2 - The strain-balanced InAsP/InP/InGaAs multiple quantum well (MQW) structures for mid-wavelength-infrared photodetectors are presented. The MQW consists of 42% strained InAsP wells, InP barriers and 2% strained InGaAs layers, where the strained InP/InAsP/InP quantum wells provide a light-absorbing layer and the strain is entirely compensated by introducing thin strained InGaAs layers.

AB - The strain-balanced InAsP/InP/InGaAs multiple quantum well (MQW) structures for mid-wavelength-infrared photodetectors are presented. The MQW consists of 42% strained InAsP wells, InP barriers and 2% strained InGaAs layers, where the strained InP/InAsP/InP quantum wells provide a light-absorbing layer and the strain is entirely compensated by introducing thin strained InGaAs layers.

UR - http://www.scopus.com/inward/record.url?scp=0037028248&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037028248&partnerID=8YFLogxK

U2 - 10.1049/el:20021160

DO - 10.1049/el:20021160

M3 - Article

AN - SCOPUS:0037028248

SN - 0013-5194

VL - 38

SP - 1744

EP - 1745

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

Strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors

Abstract

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