Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0-6nm

T. Saito; T. Nakaoka; T. Kakitsuka; Y. Yoshikuni; Y. Arakawa

doi:10.1016/j.physe.2004.08.055

Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0-6nm

T. Saito^*, T. Nakaoka, T. Kakitsuka, Y. Yoshikuni, Y. Arakawa

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

32 Citations (Scopus)

Abstract

We have calculated the strain distribution and electronic structures in stacked InAs/GaAs quantum dots (QDs) with the dot spacing 6-0nm. We used the elastic continuum theory for the strain distribution, and the 8-band k·p theory for the electronic structures. For the triply stacked QDs, the light-hole (LH) component of the hole ground state increases with decreasing the dot spacing. The LH component in the columnar QD (dot spacing 0nm) reaches 21.1% which is 4.8 times larger than that in the single QD due to the reduction of the biaxial strain. Further increase of the LH component (up to 28.6%) is obtained in the fivefold-stacked columnar QD. This result suggests a possibility of increase in the TM-mode transition in the columnar QDs.

Original language	English
Pages (from-to)	217-221
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	26
Issue number	1-4
DOIs	https://doi.org/10.1016/j.physe.2004.08.055
Publication status	Published - 2005 Feb
Externally published	Yes
Event	International Conference on Quantum Dots - Banff, Alberta, Canada Duration: 2004 May 10 → 2004 May 13

Keywords

Electronic states
Stacked quantum dots
Strain

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2004.08.055

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title = "Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0-6nm",

abstract = "We have calculated the strain distribution and electronic structures in stacked InAs/GaAs quantum dots (QDs) with the dot spacing 6-0nm. We used the elastic continuum theory for the strain distribution, and the 8-band k·p theory for the electronic structures. For the triply stacked QDs, the light-hole (LH) component of the hole ground state increases with decreasing the dot spacing. The LH component in the columnar QD (dot spacing 0nm) reaches 21.1% which is 4.8 times larger than that in the single QD due to the reduction of the biaxial strain. Further increase of the LH component (up to 28.6%) is obtained in the fivefold-stacked columnar QD. This result suggests a possibility of increase in the TM-mode transition in the columnar QDs.",

keywords = "Electronic states, Stacked quantum dots, Strain",

author = "T. Saito and T. Nakaoka and T. Kakitsuka and Y. Yoshikuni and Y. Arakawa",

note = "Funding Information: This work was supported in part by the IT program from MEXT, Japan.; International Conference on Quantum Dots ; Conference date: 10-05-2004 Through 13-05-2004",

year = "2005",

month = feb,

doi = "10.1016/j.physe.2004.08.055",

language = "English",

volume = "26",

pages = "217--221",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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publisher = "Elsevier",

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T1 - Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0-6nm

AU - Saito, T.

AU - Nakaoka, T.

AU - Kakitsuka, T.

AU - Yoshikuni, Y.

AU - Arakawa, Y.

N1 - Funding Information: This work was supported in part by the IT program from MEXT, Japan.

PY - 2005/2

Y1 - 2005/2

N2 - We have calculated the strain distribution and electronic structures in stacked InAs/GaAs quantum dots (QDs) with the dot spacing 6-0nm. We used the elastic continuum theory for the strain distribution, and the 8-band k·p theory for the electronic structures. For the triply stacked QDs, the light-hole (LH) component of the hole ground state increases with decreasing the dot spacing. The LH component in the columnar QD (dot spacing 0nm) reaches 21.1% which is 4.8 times larger than that in the single QD due to the reduction of the biaxial strain. Further increase of the LH component (up to 28.6%) is obtained in the fivefold-stacked columnar QD. This result suggests a possibility of increase in the TM-mode transition in the columnar QDs.

AB - We have calculated the strain distribution and electronic structures in stacked InAs/GaAs quantum dots (QDs) with the dot spacing 6-0nm. We used the elastic continuum theory for the strain distribution, and the 8-band k·p theory for the electronic structures. For the triply stacked QDs, the light-hole (LH) component of the hole ground state increases with decreasing the dot spacing. The LH component in the columnar QD (dot spacing 0nm) reaches 21.1% which is 4.8 times larger than that in the single QD due to the reduction of the biaxial strain. Further increase of the LH component (up to 28.6%) is obtained in the fivefold-stacked columnar QD. This result suggests a possibility of increase in the TM-mode transition in the columnar QDs.

KW - Electronic states

KW - Stacked quantum dots

KW - Strain

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U2 - 10.1016/j.physe.2004.08.055

DO - 10.1016/j.physe.2004.08.055

M3 - Conference article

AN - SCOPUS:13444273242

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VL - 26

SP - 217

EP - 221

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

T2 - International Conference on Quantum Dots

Y2 - 10 May 2004 through 13 May 2004

ER -

Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0-6nm

Abstract

Keywords

ASJC Scopus subject areas

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