Stranski-Krastanov growth of tungsten during chemical vapor deposition revealed by micro-auger electron spectroscopy

Suguru Noda; Takeshi Tsumura; Jota Fukuhara; Takashi Yoda; Hiroshi Komiyama; Yukihiro Shimogaki

doi:10.1143/JJAP.43.6974

Stranski-Krastanov growth of tungsten during chemical vapor deposition revealed by micro-auger electron spectroscopy

Suguru Noda^*, Takeshi Tsumura, Jota Fukuhara, Takashi Yoda, Hiroshi Komiyama, Yukihiro Shimogaki

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Chemical vapor deposition (CVD) of tungsten is an important process to make interconnections in advanced integrated-circuit devices. As device dimensions continue to decrease, incomplete nucleation inside the trenches and via holes is becoming a crucial issue. In this work, micro-Auger electron spectroscopy with in-plane spatial resolution was applied for the first time to study the nucleation and growth process of W islands. Results showed that W grew slowly and uniformly on TiN surfaces up to about one-monolayer coverage, and then W islands nucleated and started to grow rapidly. This transition from layer to island shows that W grew by Stranski-Krastanov mode during CVD on TiN from WF₆ and SiH₄. Drastic difference might exist in chemical reactivity between the initial W layer on TiN surfaces and the W islands, causing the change in W growth rate.

Original language	English
Pages (from-to)	6974-6977
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.43.6974
Publication status	Published - 2004 Oct
Externally published	Yes

Keywords

Chemical vapor deposition
Micro-auger electron spectroscopy
Nucleation and growth
Stranski-Krastanov growth
Titanium nitride
Tungsten

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.43.6974

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Stranski-Krastanov growth of tungsten during chemical vapor deposition revealed by micro-auger electron spectroscopy. / Noda, Suguru; Tsumura, Takeshi; Fukuhara, Jota et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 10, 10.2004, p. 6974-6977.

Research output: Contribution to journal › Article › peer-review

@article{2308b8c296094a268a6b424ff570fba2,

title = "Stranski-Krastanov growth of tungsten during chemical vapor deposition revealed by micro-auger electron spectroscopy",

abstract = "Chemical vapor deposition (CVD) of tungsten is an important process to make interconnections in advanced integrated-circuit devices. As device dimensions continue to decrease, incomplete nucleation inside the trenches and via holes is becoming a crucial issue. In this work, micro-Auger electron spectroscopy with in-plane spatial resolution was applied for the first time to study the nucleation and growth process of W islands. Results showed that W grew slowly and uniformly on TiN surfaces up to about one-monolayer coverage, and then W islands nucleated and started to grow rapidly. This transition from layer to island shows that W grew by Stranski-Krastanov mode during CVD on TiN from WF6 and SiH4. Drastic difference might exist in chemical reactivity between the initial W layer on TiN surfaces and the W islands, causing the change in W growth rate.",

keywords = "Chemical vapor deposition, Micro-auger electron spectroscopy, Nucleation and growth, Stranski-Krastanov growth, Titanium nitride, Tungsten",

author = "Suguru Noda and Takeshi Tsumura and Jota Fukuhara and Takashi Yoda and Hiroshi Komiyama and Yukihiro Shimogaki",

year = "2004",

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doi = "10.1143/JJAP.43.6974",

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T1 - Stranski-Krastanov growth of tungsten during chemical vapor deposition revealed by micro-auger electron spectroscopy

AU - Noda, Suguru

AU - Tsumura, Takeshi

AU - Fukuhara, Jota

AU - Yoda, Takashi

AU - Komiyama, Hiroshi

AU - Shimogaki, Yukihiro

PY - 2004/10

Y1 - 2004/10

N2 - Chemical vapor deposition (CVD) of tungsten is an important process to make interconnections in advanced integrated-circuit devices. As device dimensions continue to decrease, incomplete nucleation inside the trenches and via holes is becoming a crucial issue. In this work, micro-Auger electron spectroscopy with in-plane spatial resolution was applied for the first time to study the nucleation and growth process of W islands. Results showed that W grew slowly and uniformly on TiN surfaces up to about one-monolayer coverage, and then W islands nucleated and started to grow rapidly. This transition from layer to island shows that W grew by Stranski-Krastanov mode during CVD on TiN from WF6 and SiH4. Drastic difference might exist in chemical reactivity between the initial W layer on TiN surfaces and the W islands, causing the change in W growth rate.

AB - Chemical vapor deposition (CVD) of tungsten is an important process to make interconnections in advanced integrated-circuit devices. As device dimensions continue to decrease, incomplete nucleation inside the trenches and via holes is becoming a crucial issue. In this work, micro-Auger electron spectroscopy with in-plane spatial resolution was applied for the first time to study the nucleation and growth process of W islands. Results showed that W grew slowly and uniformly on TiN surfaces up to about one-monolayer coverage, and then W islands nucleated and started to grow rapidly. This transition from layer to island shows that W grew by Stranski-Krastanov mode during CVD on TiN from WF6 and SiH4. Drastic difference might exist in chemical reactivity between the initial W layer on TiN surfaces and the W islands, causing the change in W growth rate.

KW - Chemical vapor deposition

KW - Micro-auger electron spectroscopy

KW - Nucleation and growth

KW - Stranski-Krastanov growth

KW - Titanium nitride

KW - Tungsten

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Stranski-Krastanov growth of tungsten during chemical vapor deposition revealed by micro-auger electron spectroscopy

Abstract

Keywords

ASJC Scopus subject areas

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